-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IV1D12005O2 | SIC DIODE, 1200V 5A, TO-220-2 | Inventchip | TO-220-2 | 17A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 30µA @ 1200V | 320pF @ 1V, 1MHz | 1.8V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
| IV1D12010O2 | SIC DIODE, 1200V 10A, TO-220-2 | Inventchip | TO-220-2 | 28A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 575pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C (TJ) |
| IV1D06006O2 | SIC DIODE, 650V 6A, TO-220-2 | Inventchip | TO-220-2 | 17.4A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 10µA @ 650V | 212pF @ 1V, 1MHz | 1.65V @ 6A | 650V | 0ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100