Found: 3
  • SIC DIODE, 1200V 5A, TO-220-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 17A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 30µA @ 1200V
    • Capacitance @ Vr, F: 320pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • SIC DIODE, 1200V 10A, TO-220-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 28A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 575pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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  • SIC DIODE, 650V 6A, TO-220-2
    Inventchip
    • Manufacturer: Inventchip
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 17.4A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 10µA @ 650V
    • Capacitance @ Vr, F: 212pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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