-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ND350N12KHPSA1 | DIODE GP 1.2KV 350A BG-PB50ND-1 | Infineon Technologies | Module | 350A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1200V | 1200V | -40°C ~ 135°C | |
| ND261N20KHPSA1 | DIODE GP 2KV 260A BG-PB50ND-1 | Infineon Technologies | Module | 260A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 2000V | 2000V | -40°C ~ 135°C | |
| ND260N14KHPSA1 | DIODE GP 1.4KV 260A BG-PB50ND-1 | Infineon Technologies | Module | 260A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1400V | 1400V | -40°C ~ 135°C | |
| ND260N12KHPSA1 | DIODE GP 1.2KV 104A BG-PB50ND-1 | Infineon Technologies | Module | 104A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1200V | 1200V | -40°C ~ 135°C | |
| ND350N16KHPSA1 | DIODE GP 1.6KV 350A BG-PB50ND-1 | Infineon Technologies | Module | 350A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1600V | 1600V | -40°C ~ 135°C | |
| ND260N16KHPSA1 | DIODE GP 1.6KV 260A BG-PB50ND-1 | Infineon Technologies | Module | 260A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1600V | 1600V | -40°C ~ 135°C | |
| ND261N22KHPSA1 | DIODE GP 2.2KV 260A BG-PB50ND-1 | Infineon Technologies | Module | 260A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 2200V | 2200V | -40°C ~ 135°C | |
| ND261N26KHPSA1 | DIODE GP 2.6KV 260A BG-PB50ND-1 | Infineon Technologies | Module | 260A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 2600V | 2600V | -40°C ~ 135°C | |
| ND242S10KHPSA1 | DIODE GP 1KV 261A BG-PB50ND-1 | Infineon Technologies | Module | 261A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 1000V | 1000V | -40°C ~ 135°C | |
| ND241S14KHPSA1 | DIODE GP 1.4KV 261A BG-PB50ND-1 | Infineon Technologies | Module | 261A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 1400V | 1400V | -40°C ~ 135°C | |
| ND260N08KHPSA1 | DIODE BG-PB50ND-1 | Infineon Technologies | Module | 260A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 800V | 1.32V @ 800A | 800V | 150°C (Max) |
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