-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| D4201N18TS01VFXPSA1 | DIODE MODULE | Infineon Technologies | DO-200AE | 6010A | Standard | Chassis Mount | BG-D12035K-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 2200V | 1V @ 4000A | 2200V | -40°C ~ 160°C |
| D3501N36TXPSA1 | DIODE GP 4870A BG-D12035K-1 | Infineon Technologies | DO-200AE | 4870A | Standard | Chassis Mount | BG-D12035K-1 | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 4200V | -40°C ~ 160°C | ||
| D3501N42TVFXPSA1 | HIGH POWER THYR / DIO | Infineon Technologies | DO-200AE | 4870A | Standard | Chassis Mount | BG-D12035K-1 | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 4200V | 4200V | 160°C (Max) |
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