-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|
D1461S45TXPSA2 | DIODE GEN PURP D10026K-1 | Infineon Technologies | DO-200, Variant | 1720A | Standard | Chassis Mount | BG-D10026K-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 4500V | -40°C ~ 140°C | |
D1821SH45TS05XOSA1 | DIODE MODULE | Infineon Technologies | DO-200, Variant | 1710A | Standard | Chassis Mount | BG-D10026K-1 | Standard Recovery >500ns, > 200mA (Io) | 4500V | ||
D1461S45TXPSA1 | DIODE GEN PURP D10026K-1 | Infineon Technologies | DO-200, Variant | 1720A | Standard | Chassis Mount | BG-D10026K-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 4500V | -40°C ~ 140°C | |
D1721NH90TAOSA1 | DIODE GEN PURP D12026K-1 | Infineon Technologies | DO-200, Variant | 2160A | Standard | Chassis Mount | BG-D10026K-1 | Standard Recovery >500ns, > 200mA (Io) | 150mA @ 9000V | 0°C ~ 140°C |
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