-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GD10MPS12A | 1200V 10A TO-220-2 SIC SCHOTTKY | GeneSiC Semiconductor | TO-220-2 | 25A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 5µA @ 1200V | 367pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GC08MPS12-220 | SIC DIODE 1200V 8A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 43A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 7µA @ 1200V | 545pF @ 1V, 1MHz | 1.8V @ 8A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GD30MPS06A | 650V 30A TO-220-2 SIC SCHOTTKY M | GeneSiC Semiconductor | TO-220-2 | 30A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 650V | 0ns | 175°C | SiC Schottky MPS™ | |||
| GB02SLT12-220 | DIODE SCHOTTKY 1.2KV 2A TO220AC | GeneSiC Semiconductor | TO-220-2 | 2A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 138pF @ 1V, 1MHz | 1.8V @ 2A | 1200V | 0ns | -55°C ~ 175°C | |
| GC15MPS12-220 | SIC DIODE 1200V 15A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 82A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 14µA @ 1200V | 1089pF @ 1V, 1MHz | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GE06MPS06A | 650V 6A TO-220-2 SIC SCHOTTKY MP | GeneSiC Semiconductor | TO-220-2 | 12A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 279pF @ 1V, 1MHz | 650V | -55°C ~ 175°C | SiC Schottky MPS™ | |||
| GB05SLT12-220 | DIODE SCHOTTKY 1.2KV 5A TO220AC | GeneSiC Semiconductor | TO-220-2 | 5A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 260pF @ 1V, 1MHz | 1.8V @ 2A | 1200V | 0ns | -55°C ~ 175°C | |
| GC05MPS12-220 | SIC DIODE 1200V 5A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 29A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 4µA @ 1200V | 359pF @ 1V, 1MHz | 1.8V @ 5A | 1200V | 0ns | -55°C ~ 175°C | |
| GE04MPS06A | 650V 4A TO-220-2 SIC SCHOTTKY MP | GeneSiC Semiconductor | TO-220-2 | 9A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 5µA @ 650V | 186pF @ 1V, 1MHz | 1.35V @ 4A | 650V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GC02MPS12-220 | SIC DIODE 1200V 2A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 12A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 2µA @ 1200V | 127pF @ 1V, 1MHz | 1.8V @ 2A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GB01SLT12-220 | DIODE SCHOTTKY 1.2KV 1A TO220AC | GeneSiC Semiconductor | TO-220-2 | 1A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 2µA @ 1200V | 69pF @ 1V, 1MHz | 1.8V @ 1A | 1200V | 0ns | -55°C ~ 175°C | |
| GD20MPS12A | 1200V 20A TO-220-2 SIC SCHOTTKY | GeneSiC Semiconductor | TO-220-2 | 42A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 10µA @ 1200V | 737pF @ 1V, 1MHz | 1.8V @ 20A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GC10MPS12-220 | SIC DIODE 1200V 10A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 54A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 10µA @ 1200V | 660pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
| GE08MPS06A | 650V 8A TO-220-2 SIC SCHOTTKY MP | GeneSiC Semiconductor | TO-220-2 | 15A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 373pF @ 1V, 1MHz | 650V | -55°C ~ 175°C | SiC Schottky MPS™ | |||
| GC20MPS12-220 | SIC DIODE 1200V 20A TO-220-2 | GeneSiC Semiconductor | TO-220-2 | 94A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 18µA @ 1200V | 1298pF @ 1V, 1MHz | 1.8V @ 20A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ |
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