-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBPC15010T | BRIDGE RECT 1P 1KV 15A GBPC-T | GeneSiC Semiconductor | 4-Square, GBPC-T | 1kV | 15A | Single Phase | QC Terminal | GBPC-T | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 7.5A |
| GBPC3504T | BRIDGE RECT 1P 400V 35A GBPC-T | GeneSiC Semiconductor | 4-Square, GBPC-T | 400V | 35A | Single Phase | QC Terminal | GBPC-T | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 12.5A |
| GBPC3502T | BRIDGE RECT 1P 200V 35A GBPC-T | GeneSiC Semiconductor | 4-Square, GBPC-T | 200V | 35A | Single Phase | QC Terminal | GBPC-T | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 12.5A |
- 10
- 15
- 50
- 100