-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
S300YR | DIODE GEN PURP REV 1.6KV DO9 | GeneSiC Semiconductor | DO-205AB, DO-9, Stud | 300A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-9 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1600V | 1.2V @ 300A | 1600V | -60°C ~ 180°C |
S300Y | DIODE GEN PURP 1.6KV 300A DO9 | GeneSiC Semiconductor | DO-205AB, DO-9, Stud | 300A | Standard | Chassis, Stud Mount | DO-9 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1600V | 1.2V @ 300A | 1600V | -60°C ~ 180°C |
- 10
- 15
- 50
- 100