• Тип корпуса
    • Входной каскад
    • IGBT Type
    • Обратный ток коллектора
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Время обратного восстановления (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Серия
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Списком Таблицей
Найдено: 15
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Vce(on) (Max) @ Vge, Ic
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
HGTH12N50C1D 12A, 500V, N-CHANNEL IGBT Harris Corporation TO-218-3 Isolated Tab, TO-218AC 12A 500V 75W Through Hole -55°C ~ 150°C (TJ) TO-218 Isolated Standard 3.2V @ 20V, 17.5A 17.5 A 100ns 19nC
HGTD10N50F1S 10A, 500V N-CHANNEL IGBT Harris Corporation TO-252-3, DPak (2 Leads + Tab), SC-63 12A 500V 75W Surface Mount -55°C ~ 150°C (TJ) TO-252, (D-Pak) Standard 2.5V @ 10V, 5A 13.4 nC
HGTD10N40F1S 10A, 400V N-CHANNEL IGBT Harris Corporation TO-252-3, DPak (2 Leads + Tab), SC-63 12A 400V 75W Surface Mount -55°C ~ 150°C (TJ) TO-252, (D-Pak) Standard 2.5V @ 10V, 5A 13.4 nC
HGTH12N50C1 12A, 500V, N-CHANNEL IGBT Harris Corporation TO-218-3 Isolated Tab, TO-218AC 12A 500V 75W Through Hole -55°C ~ 150°C (TJ) TO-218 Isolated Standard 3.2V @ 20V, 17.5A 17.5 A 19nC
HGTP10N40F1D 12A, 400V, N-CHANNEL IGBT Harris Corporation TO-220-3 12A 400V 75W Through Hole -55°C ~ 150°C (TJ) TO-220 Standard 2.5V @ 10V, 5A 12A 13.4 nC
HGTH12N40C1D 12A, 400V, N-CHANNEL IGBT Harris Corporation TO-218-3 Isolated Tab, TO-218AC 12A 400V 75W Through Hole -55°C ~ 150°C (TJ) TO-218 Isolated Standard 3.2V @ 20V, 17.5A 17.5 A 100ns 19nC
HGTB12N60D1C 12A, 600V N-CHANNEL IGBT Harris Corporation TO-220-5 12A 600V 75W Through Hole -55°C ~ 150°C (TJ) TO-220-5 Standard 2.7V @ 15V, 10A 40A
HGTD10N40F1 10A, 400V N-CHANNEL IGBT Harris Corporation TO-251-3 Short Leads, IPak, TO-251AA 12A 400V 75W Through Hole -55°C ~ 150°C (TJ) I-PAK Standard 2.5V @ 10V, 5A 13.4 nC
HGTD10N50F1 10A, 500V N-CHANNEL IGBT Harris Corporation TO-251-3 Short Leads, IPak, TO-251AA 12A 500V 75W Through Hole -55°C ~ 150°C (TJ) I-PAK Standard 2.5V @ 10V, 5A 13.4 nC
HGTH12N40E1D 12A, 400V, N-CHANNEL IGBT Harris Corporation TO-218-3 Isolated Tab, TO-218AC 12A 400V 75W Through Hole -55°C ~ 150°C (TJ) TO-218 Isolated Standard 3.2V @ 20V, 17.5A 17.5 A 100ns 19nC
IXBH6N170 IGBT 1700V 12A 75W TO247AD IXYS TO-247-3 12A 1700V 75W Through Hole -55°C ~ 150°C (TJ) TO-247AD Standard 3.4V @ 15V, 6A 36A 1.08µs 17nC BIMOSFET™
IXGT6N170 IGBT 1700V 12A 75W TO268 IXYS TO-268-3, D³Pak (2 Leads + Tab), TO-268AA 12A 1700V 75W Surface Mount -55°C ~ 150°C (TJ) TO-268AA Standard NPT 4V @ 15V, 6A 1360V, 6A, 33Ohm, 15V 24A 1.5mJ (off) 20nC 40ns/250ns
IXGH6N170 IGBT 1700V 12A 75W TO247 IXYS TO-247-3 12A 1700V 75W Through Hole -55°C ~ 150°C (TJ) TO-247AD Standard NPT 4V @ 15V, 6A 1360V, 6A, 33Ohm, 15V 24A 1.5mJ (off) 20nC 40ns/250ns
IXGT6N170-TRL IXGT6N170 TRL IXYS TO-268-3, D³Pak (2 Leads + Tab), TO-268AA 12A 1700V 75W Surface Mount -55°C ~ 150°C (TJ) TO-268 Standard 4V @ 15V, 6A 1360V, 6A, 33Ohm, 15V 24A 36ns 20nC 40ns/250ns
IXBT6N170 IGBT 1700V 12A 75W TO268 IXYS TO-268-3, D³Pak (2 Leads + Tab), TO-268AA 12A 1700V 75W Surface Mount -55°C ~ 150°C (TJ) TO-268AA Standard 3.4V @ 15V, 6A 36A 1.08µs 17nC BIMOSFET™
  • 10
  • 15
  • 50
  • 100