Найдено: 4
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Vce(on) (Max) @ Vge, Ic
Test Condition
Current - Collector Pulsed (Icm)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
APT50GR120L IGBT 1200V 117A 694W TO264 Microchip Technology TO-264-3, TO-264AA 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-264 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT50GR120B2 IGBT 1200V 117A 694W TO247 Microchip Technology TO-247-3 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-247 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT50GR120L IGBT 1200V 117A 694W TO264 Microsemi Corporation TO-264-3, TO-264AA 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-264 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT50GR120B2 IGBT 1200V 117A 694W TO247 Microsemi Corporation TO-247-3 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-247 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns