-
- Тип корпуса
- Входной каскад
- IGBT Type
- Обратный ток коллектора
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Время обратного восстановления (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Рабочая температура
|
Тип корпуса
|
Входной каскад
|
Vce(on) (Max) @ Vge, Ic
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Время обратного восстановления (trr)
|
Gate Charge
|
Td (on/off) @ 25°C
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HGTP10N50E1 | 10A, 500V, N-CHANNEL IGBT | Harris Corporation | TO-220-3 | 10A | 500V | 60W | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | Standard | 3.2V @ 20V, 17.5A | 17.5 A | 19nC | |||
| HGTP10N40E1 | 10A, 400V, N-CHANNEL IGBT | Harris Corporation | TO-220-3 | 10A | 400V | 60W | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | Standard | 3.2V @ 20V, 17.5A | 17.5 A | 19nC | |||
| HGTP10N40C1 | 10A, 400V, N-CHANNEL IGBT | Harris Corporation | TO-220-3 | 10A | 400V | 60W | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | Standard | 3.2V @ 20V, 17.5A | 17.5 A | 19nC | |||
| GT10J312(Q) | IGBT 600V 10A 60W TO220SM | Toshiba Semiconductor and Storage | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | 600V | 60W | Surface Mount | 150°C (TJ) | TO-220SM | Standard | 2.7V @ 15V, 10A | 300V, 10A, 100Ohm, 15V | 20A | 200ns | 400ns/400ns |
- 10
- 15
- 50
- 100