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- Тип корпуса
- Входной каскад
- IGBT Type
- Обратный ток коллектора
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Время обратного восстановления (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Серия
Наименование | Описание | Производитель
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Package / Case
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Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Рабочая температура
|
Тип корпуса
|
Входной каскад
|
IGBT Type
|
Vce(on) (Max) @ Vge, Ic
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Время обратного восстановления (trr)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Серия
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
APT68GA60B | IGBT 600V 121A 520W TO-247 | Microchip Technology | TO-247-3 | 121A | 600V | 520W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 [B] | Standard | PT | 2.5V @ 15V, 40A | 400V, 40A, 4.7Ohm, 15V | 202A | 715µJ (on), 607µJ (off) | 298nC | 21ns/133ns | POWER MOS 8™ | |
APT68GA60B2D40 | IGBT 600V 121A 520W TO-247 | Microchip Technology | TO-247-3 Variant | 121A | 600V | 520W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 2.5V @ 15V, 40A | 400V, 40A, 4.7Ohm, 15V | 202A | 715µJ (on), 607µJ (off) | 198nC | 21ns/133ns | POWER MOS 8™ | ||
APT68GA60LD40 | IGBT 600V 121A 520W TO-264 | Microchip Technology | TO-264-3, TO-264AA | 121A | 600V | 520W | Through Hole | -55°C ~ 150°C (TJ) | TO-264 [L] | Standard | PT | 2.5V @ 15V, 40A | 400V, 40A, 4.7Ohm, 15V | 202A | 22ns | 715µJ (on), 607µJ (off) | 198nC | 21ns/133ns | POWER MOS 8™ |
APT68GA60B2D40 | IGBT 600V 121A 520W TO-247 | Microsemi Corporation | TO-247-3 Variant | 121A | 600V | 520W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 2.5V @ 15V, 40A | 400V, 40A, 4.7Ohm, 15V | 202A | 715µJ (on), 607µJ (off) | 198nC | 21ns/133ns | POWER MOS 8™ | ||
APT68GA60B | IGBT 600V 121A 520W TO-247 | Microsemi Corporation | TO-247-3 | 121A | 600V | 520W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 [B] | Standard | PT | 2.5V @ 15V, 40A | 400V, 40A, 4.7Ohm, 15V | 202A | 715µJ (on), 607µJ (off) | 298nC | 21ns/133ns | POWER MOS 8™ | |
APT68GA60LD40 | IGBT 600V 121A 520W TO-264 | Microsemi Corporation | TO-264-3, TO-264AA | 121A | 600V | 520W | Through Hole | -55°C ~ 150°C (TJ) | TO-264 [L] | Standard | PT | 2.5V @ 15V, 40A | 400V, 40A, 4.7Ohm, 15V | 202A | 22ns | 715µJ (on), 607µJ (off) | 198nC | 21ns/133ns | POWER MOS 8™ |
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