Найдено: 6
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Vce(on) (Max) @ Vge, Ic
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
APT68GA60B IGBT 600V 121A 520W TO-247 Microchip Technology TO-247-3 121A 600V 520W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard PT 2.5V @ 15V, 40A 400V, 40A, 4.7Ohm, 15V 202A 715µJ (on), 607µJ (off) 298nC 21ns/133ns POWER MOS 8™
APT68GA60B2D40 IGBT 600V 121A 520W TO-247 Microchip Technology TO-247-3 Variant 121A 600V 520W Through Hole -55°C ~ 150°C (TJ) Standard PT 2.5V @ 15V, 40A 400V, 40A, 4.7Ohm, 15V 202A 715µJ (on), 607µJ (off) 198nC 21ns/133ns POWER MOS 8™
APT68GA60LD40 IGBT 600V 121A 520W TO-264 Microchip Technology TO-264-3, TO-264AA 121A 600V 520W Through Hole -55°C ~ 150°C (TJ) TO-264 [L] Standard PT 2.5V @ 15V, 40A 400V, 40A, 4.7Ohm, 15V 202A 22ns 715µJ (on), 607µJ (off) 198nC 21ns/133ns POWER MOS 8™
APT68GA60B2D40 IGBT 600V 121A 520W TO-247 Microsemi Corporation TO-247-3 Variant 121A 600V 520W Through Hole -55°C ~ 150°C (TJ) Standard PT 2.5V @ 15V, 40A 400V, 40A, 4.7Ohm, 15V 202A 715µJ (on), 607µJ (off) 198nC 21ns/133ns POWER MOS 8™
APT68GA60B IGBT 600V 121A 520W TO-247 Microsemi Corporation TO-247-3 121A 600V 520W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard PT 2.5V @ 15V, 40A 400V, 40A, 4.7Ohm, 15V 202A 715µJ (on), 607µJ (off) 298nC 21ns/133ns POWER MOS 8™
APT68GA60LD40 IGBT 600V 121A 520W TO-264 Microsemi Corporation TO-264-3, TO-264AA 121A 600V 520W Through Hole -55°C ~ 150°C (TJ) TO-264 [L] Standard PT 2.5V @ 15V, 40A 400V, 40A, 4.7Ohm, 15V 202A 22ns 715µJ (on), 607µJ (off) 198nC 21ns/133ns POWER MOS 8™