Найдено: 17
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
APTGT75A120T1G IGBT MODULE 1200V 110A 357W SP1 Microchip Technology SP1 110A 1200V 357W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) SP1 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DH120T3G IGBT MODULE 1200V 110A 357W SP3 Microchip Technology SP3 110A 1200V 357W Chassis Mount Asymmetrical Bridge -40°C ~ 150°C (TJ) SP3 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75H120TG IGBT MODULE 1200V 110A 357W SP4 Microchip Technology SP4 110A 1200V 357W Chassis Mount Full Bridge Inverter -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75SK120TG IGBT MODULE 1200V 110A 357W SP4 Microchip Technology SP4 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DA120TG IGBT MODULE 1200V 110A 357W SP4 Microchip Technology SP4 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75A1202G IGBT MODULE 1200V 110A 357W SP2 Microsemi Corporation SP2 110A 1200V 357W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) SP2 Trench Field Stop 50µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard No
APTGT75SK120T1G IGBT MODULE 1200V 110A 357W SP1 Microsemi Corporation SP1 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP1 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DA120TG IGBT MODULE 1200V 110A 357W SP4 Microsemi Corporation SP4 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DA120T1G IGBT MODULE 1200V 110A 357W SP1 Microsemi Corporation SP1 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP1 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DH120TG IGBT MODULE 1200V 110A 357W SP4 Microsemi Corporation SP4 110A 1200V 357W Chassis Mount Asymmetrical Bridge -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75A120D1G IGBT MODULE 1200V 110A 357W D1 Microsemi Corporation D1 110A 1200V 357W Chassis Mount Half Bridge D1 Trench Field Stop 4mA 2.1V @ 15V, 75A 5.345 nF @ 25 V Standard No
APTGT75A120T1G IGBT MODULE 1200V 110A 357W SP1 Microsemi Corporation SP1 110A 1200V 357W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) SP1 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DH120T3G IGBT MODULE 1200V 110A 357W SP3 Microsemi Corporation SP3 110A 1200V 357W Chassis Mount Asymmetrical Bridge -40°C ~ 150°C (TJ) SP3 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75H120TG IGBT MODULE 1200V 110A 357W SP4 Microsemi Corporation SP4 110A 1200V 357W Chassis Mount Full Bridge Inverter -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75DA120D1G IGBT MODULE 1200V 110A 357W D1 Microsemi Corporation D1 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) D1 Trench Field Stop 4mA 2.1V @ 15V, 75A 5.345 nF @ 25 V Standard No