Найдено: 4
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Vce(on) (Max) @ Vge, Ic
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
AOTF5B65M1 IGBT 650V 5A TO220 Alpha & Omega Semiconductor Inc. TO-220-3 10A 650V 25W Through Hole -55°C ~ 150°C (TJ) TO-220 Standard 1.98V @ 15V, 5A 400V, 5A, 60Ohm, 15V 15A 195ns 80µJ (on), 70µJ (off) 14nC 8.5ns/106ns Alpha IGBT™
RGT20TM65DGC9 650V 10A FIELD STOP TRENCH IGBT Rohm Semiconductor TO-220-3 Full Pack 10A 650V 25W Through Hole -40°C ~ 175°C (TJ) TO-220NFM Standard Trench Field Stop 2.1V @ 15V, 10A 400V, 10A, 10Ohm, 15V 30A 42ns 22nC 12ns/32ns
STGF7NC60HD IGBT 600V 10A 25W TO220FP STMicroelectronics TO-220-3 Full Pack 10A 600V 25W Through Hole -55°C ~ 150°C (TJ) TO-220FP Standard 2.5V @ 15V, 7A 390V, 7A, 10Ohm, 15V 50A 37ns 95µJ (on), 115µJ (off) 35nC 18.5ns/72ns PowerMESH™
STGF10NC60SD IGBT 600V 10A 25W TP220FP STMicroelectronics TO-220-3 Full Pack 10A 600V 25W Through Hole -55°C ~ 150°C (TJ) TO-220FP Standard 1.65V @ 15V, 5A 390V, 5A, 10Ohm, 15V 25A 22ns 60µJ (on), 340µJ (off) 18nC 19ns/160ns PowerMESH™