• Тип корпуса
    • Входной каскад
    • IGBT Type
    • Обратный ток коллектора
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Время обратного восстановления (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Серия
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Списком Таблицей
Найдено: 43
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Время обратного восстановления (trr)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
APTCV60TLM24T3G IGBT MODULE 600V 100A 250W SP3 Microchip Technology Module 100A 600V 250W Chassis Mount Three Level Inverter -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGTQ100DA65T1G IGBT MODULE 650V 100A 250W SP1 Microchip Technology Module 100A 650V 250W Chassis Mount Boost Chopper -40°C ~ 175°C (TJ) SP1 100µA 2.2V @ 15V, 100A 6nF @ 25V Standard Yes
APTGTQ100H65T3G IGBT MODULE 650V 100A 250W SP3F Microchip Technology Module 100A 650V 250W Chassis Mount Full Bridge -40°C ~ 175°C (TJ) SP3F 100µA 2.2V @ 15V, 100A 6nF @ 25V Standard Yes
APTCV60TLM45T3G IGBT MODULE 600V 100A 250W SP3 Microchip Technology SP3 100A 600V 250W Chassis Mount Three Level Inverter - IGBT, FET -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGT75A60T1G IGBT MODULE 600V 100A 250W SP1 Microchip Technology SP1 100A 600V 250W Chassis Mount Half Bridge -40°C ~ 175°C (TJ) SP1 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGTQ100A65T1G IGBT MODULE 650V 100A 250W SP1 Microchip Technology Module 100A 650V 250W Chassis Mount Half Bridge -40°C ~ 175°C (TJ) SP1 100µA 2.2V @ 15V, 100A 6nF @ 25V Standard Yes
APTGT75SK60T1G IGBT MODULE 600V 100A 250W SP1 Microsemi Corporation SP1 100A 600V 250W Chassis Mount Single -40°C ~ 175°C (TJ) SP1 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGT75H60T2G IGBT MODULE 600V 100A 250W SP2 Microsemi Corporation SP2 100A 600V 250W Chassis Mount Full Bridge Inverter -40°C ~ 175°C (TJ) SP2 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGT75DDA60T3G IGBT MODULE 600V 100A 250W SP3 Microsemi Corporation SP3 100A 600V 250W Chassis Mount Dual Boost Chopper -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGT75H60T3G IGBT MODULE 600V 100A 250W SP3 Microsemi Corporation SP3 100A 600V 250W Chassis Mount Full Bridge Inverter -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGT75DSK60T3G IGBT MODULE 600V 100A 250W SP3 Microsemi Corporation SP3 100A 600V 250W Chassis Mount Dual Buck Chopper -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
APTGT75TA60PG IGBT MODULE 600V 100A 250W SP6P Microsemi Corporation SP6 100A 600V 250W Chassis Mount Three Phase -40°C ~ 175°C (TJ) SP6-P Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard No
APTGT75DA60T1G IGBT MODULE 600V 100A 250W SP1 Microsemi Corporation SP1 100A 600V 250W Chassis Mount Single -40°C ~ 175°C (TJ) SP1 Trench Field Stop 250µA 1.9V @ 15V, 75A 4.62nF @ 25V Standard Yes
RJH65T14DPQ-A0#T0 IGBT TRENCH 650V 100A TO247A Renesas Electronics America TO-247-3 100A 650V 250W Through Hole 175°C (TJ) TO-247A Standard Trench 1.75V @ 15V, 50A 400V, 50A, 10Ohm, 15V 250ns 1.3mJ (on), 1.2mJ (off) 80nC 38ns/125ns
RJH65T14DPQ-A0#T0 IGBT TRENCH 650V 100A TO247A Renesas Electronics America Inc TO-247-3 100A 650V 250W Through Hole 175°C (TJ) TO-247A Standard Trench 1.75V @ 15V, 50A 400V, 50A, 10Ohm, 15V 250ns 1.3mJ (on), 1.2mJ (off) 80nC 38ns/125ns
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  • 15
  • 50
  • 100