- Мощность - Макс.
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
-
- Тип корпуса
- Входной каскад
- IGBT Type
- Обратный ток коллектора
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Время обратного восстановления (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Серия
Наименование | Описание | Производитель
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Package / Case
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Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Конфигурация
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Рабочая температура
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Тип корпуса
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Входной каскад
|
IGBT Type
|
Обратный ток коллектора
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Время обратного восстановления (trr)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Серия
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DF200R12KE3HOSA1 | IGBT MODULE 1200V 1040W | Infineon Technologies | Module | 1200V | 1040W | Chassis Mount | Single | -40°C ~ 125°C | Module | 5mA | 2.15V @ 15V, 200A | 14nF @ 25V | Standard | No | ||||||||||
IXBK75N170 | IGBT 1700V 200A 1040W TO264 | IXYS | TO-264-3, TO-264AA | 200A | 1700V | 1040W | Through Hole | -55°C ~ 150°C (TJ) | TO-264AA | Standard | 3.1V @ 15V, 75A | 580A | 1.5µs | 350nC | BIMOSFET™ | |||||||||
IXBK75N170A | IGBT 1700V 110A 1040W TO264 | IXYS | TO-264-3, TO-264AA | 110A | 1700V | 1040W | Through Hole | -55°C ~ 150°C (TJ) | TO-264AA | Standard | 6V @ 15V, 42A | 1360V, 42A, 1Ohm, 15V | 300A | 360ns | 3.8mJ (off) | 358nC | 26ns/418ns | BIMOSFET™ | ||||||
IXYB82N120C3H1 | IGBT 1200V 164A 1040W PLUS264 | IXYS | TO-264-3, TO-264AA | 164A | 1200V | 1040W | Through Hole | -55°C ~ 150°C (TJ) | PLUS264™ | Standard | 3.2V @ 15V, 82A | 600V, 80A, 2Ohm, 15V | 320A | 420ns | 4.95mJ (on), 2.78mJ (off) | 215nC | 29ns/192ns | GenX3™, XPT™ | ||||||
IXBX75N170A | IGBT 1700V 110A 1040W PLUS247 | IXYS | TO-247-3 Variant | 110A | 1700V | 1040W | Through Hole | -55°C ~ 150°C (TJ) | PLUS247™-3 | Standard | 6V @ 15V, 42A | 1360V, 42A, 1Ohm, 15V | 300A | 360ns | 3.8mJ (off) | 358nC | 26ns/418ns | BIMOSFET™ | ||||||
IXBX75N170 | IGBT 1700V 200A 1040W PLUS247 | IXYS | TO-247-3 Variant | 200A | 1700V | 1040W | Through Hole | -55°C ~ 150°C (TJ) | PLUS247™-3 | Standard | 3.1V @ 15V, 75A | 580A | 1.5µs | 350nC | BIMOSFET™ | |||||||||
APTGT200A120D3G | IGBT MODULE 1200V 300A 1040W D3 | Microchip Technology | D-3 Module | 300A | 1200V | 1040W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | D3 | Trench Field Stop | 6mA | 2.1V @ 15V, 200A | 14nF @ 25V | Standard | No | ||||||||
APTGT200A120D3G | IGBT MODULE 1200V 300A 1040W D3 | Microsemi Corporation | D-3 Module | 300A | 1200V | 1040W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | D3 | Trench Field Stop | 6mA | 2.1V @ 15V, 200A | 14nF @ 25V | Standard | No | ||||||||
CM400DU-24NFH | IGBT MOD 1200V 400A 1040W | Powerex Inc. | Module | 400A | 1200V | 1040W | Chassis Mount | Half Bridge | -40°C ~ 150°C (TJ) | Module | 1mA | 6.5V @ 15V, 400A | 63nF @ 10V | Standard | No | IGBTMOD™ |
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