• Ток коллектора (макс)
  • Граничное напряжение КЭ(макс)
  • Мощность - Макс.
    • Тип корпуса
    • Входной каскад
    • IGBT Type
    • Обратный ток коллектора
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Время обратного восстановления (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Серия
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Списком Таблицей
Найдено: 11
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
F3L100R07W2E3B11BOMA1 IGBT MOD 650V 117A 300W Infineon Technologies Module 117A 650V 300W Chassis Mount Three Phase Inverter -40°C ~ 150°C Module Trench Field Stop 1mA 1.9V @ 15V, 100A 6.2nF @ 25V Standard Yes
APT50GR120L IGBT 1200V 117A 694W TO264 Microchip Technology TO-264-3, TO-264AA 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-264 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT64GA90B IGBT 900V 117A 500W TO247 Microchip Technology TO-247-3 117A 900V 500W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard PT 3.1V @ 15V, 38A 600V, 38A, 4.7Ohm, 15V 193A 1857µJ (on), 2311µJ (off) 162nC 18ns/131ns
APT64GA90LD30 IGBT 900V 117A 500W TO-264 Microchip Technology TO-264-3, TO-264AA 117A 900V 500W Through Hole -55°C ~ 150°C (TJ) TO-264 [L] Standard PT 3.1V @ 15V, 38A 600V, 38A, 4.7Ohm, 15V 193A 1192µJ (on), 1088µJ (off) 162nC 18ns/131ns POWER MOS 8™
APT50GR120B2 IGBT 1200V 117A 694W TO247 Microchip Technology TO-247-3 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-247 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT64GA90B2D30 IGBT 900V 117A 500W TO-247 Microchip Technology TO-247-3 Variant 117A 900V 500W Through Hole -55°C ~ 150°C (TJ) Standard PT 3.1V @ 15V, 38A 600V, 38A, 4.7Ohm, 15V 193A 1192µJ (on), 1088µJ (off) 162nC 18ns/131ns POWER MOS 8™
APT64GA90LD30 IGBT 900V 117A 500W TO-264 Microsemi Corporation TO-264-3, TO-264AA 117A 900V 500W Through Hole -55°C ~ 150°C (TJ) TO-264 [L] Standard PT 3.1V @ 15V, 38A 600V, 38A, 4.7Ohm, 15V 193A 1192µJ (on), 1088µJ (off) 162nC 18ns/131ns POWER MOS 8™
APT50GR120L IGBT 1200V 117A 694W TO264 Microsemi Corporation TO-264-3, TO-264AA 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-264 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT64GA90B2D30 IGBT 900V 117A 500W TO-247 Microsemi Corporation TO-247-3 Variant 117A 900V 500W Through Hole -55°C ~ 150°C (TJ) Standard PT 3.1V @ 15V, 38A 600V, 38A, 4.7Ohm, 15V 193A 1192µJ (on), 1088µJ (off) 162nC 18ns/131ns POWER MOS 8™
APT50GR120B2 IGBT 1200V 117A 694W TO247 Microsemi Corporation TO-247-3 117A 1200V 694W Through Hole -55°C ~ 150°C (TJ) TO-247 Standard NPT 3.2V @ 15V, 50A 600V, 50A, 4.3Ohm, 15V 200A 2.14mJ (on), 1.48mJ (off) 445nC 28ns/237ns
APT64GA90B IGBT 900V 117A 500W TO247 Microsemi Corporation TO-247-3 117A 900V 500W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard PT 3.1V @ 15V, 38A 600V, 38A, 4.7Ohm, 15V 193A 1857µJ (on), 2311µJ (off) 162nC 18ns/131ns
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