- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Мощность - Макс.
-
- Тип корпуса
- Входной каскад
- IGBT Type
- Обратный ток коллектора
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Время обратного восстановления (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Конфигурация
|
Рабочая температура
|
Тип корпуса
|
Входной каскад
|
IGBT Type
|
Обратный ток коллектора
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Время обратного восстановления (trr)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRG7PSH50UDPBF | IGBT TRENCH 1200V 116A SUPER247 | Infineon Technologies | TO-247-3 | 116A | 1200V | 462W | Through Hole | -55°C ~ 150°C (TJ) | SUPER-247™ (TO-274AA) | Standard | Trench | 2V @ 15V, 50A | 600V, 50A, 5Ohm, 15V | 150A | 190ns | 3.6mJ (on), 2.2mJ (off) | 440nC | 35ns/430ns | ||||||
| IRG7PSH50UDPBF | IRG7PSH50 - DISCRETE IGBT WITH A | International Rectifier | TO-247-3 | 116A | 1200V | 462W | Through Hole | -55°C ~ 150°C (TJ) | SUPER-247™ (TO-274AA) | Standard | Trench | 2V @ 15V, 50A | 600V, 50A, 5Ohm, 15V | 150A | 190ns | 3.6mJ (on), 2.2mJ (off) | 440nC | 35ns/430ns | ||||||
| IXXH60N65B4 | IGBT 650V 116A 455W TO247AD | IXYS | TO-247-3 | 116A | 650V | 455W | Through Hole | -55°C ~ 175°C (TJ) | TO-247 (IXXH) | Standard | PT | 2V @ 15V, 60A | 400V, 60A, 5Ohm, 15V | 250A | 3.13mJ (on), 1.15mJ (off) | 95nC | 37ns/145ns | GenX4™, XPT™ | ||||||
| IXBL64N250 | IGBT 2500V 116A 500W ISOPLUSI5 | IXYS | ISOPLUSi5-Pak™ | 116A | 2500V | 500W | Through Hole | -55°C ~ 150°C (TJ) | ISOPLUSi5-Pak™ | Standard | 3V @ 15V, 64A | 750A | 160ns | 400nC | BIMOSFET™ | |||||||||
| IXXH60N65B4H1 | IGBT 650V 116A 380W TO247AD | IXYS | TO-247-3 | 116A | 650V | 380W | Through Hole | -55°C ~ 175°C (TJ) | TO-247 (IXXH) | Standard | PT | 2V @ 15V, 60A | 400V, 60A, 5Ohm, 15V | 230A | 150ns | 3.13mJ (on), 1.15mJ (off) | 95nC | 37ns/145ns | GenX4™, XPT™ | |||||
| APT85GR120JD60 | IGBT MOD 1200V 116A 543W SOT227 | Microchip Technology | SOT-227-4, miniBLOC | 116A | 1200V | 543W | Chassis Mount | Single | -55°C ~ 150°C (TJ) | SOT-227 | NPT | 1.1mA | 3.2V @ 15V, 85A | 8.4nF @ 25V | Standard | No | ||||||||
| APT85GR120J | IGBT MOD 1200V 116A 543W SOT227 | Microchip Technology | SOT-227-4, miniBLOC | 116A | 1200V | 543W | Chassis Mount | Single | -55°C ~ 150°C (TJ) | SOT-227 | NPT | 1mA | 3.2V @ 15V, 85A | 8.4nF @ 25V | Standard | No | ||||||||
| APT85GR120JD60 | IGBT MOD 1200V 116A 543W SOT227 | Microsemi Corporation | SOT-227-4, miniBLOC | 116A | 1200V | 543W | Chassis Mount | Single | -55°C ~ 150°C (TJ) | SOT-227 | NPT | 1.1mA | 3.2V @ 15V, 85A | 8.4nF @ 25V | Standard | No | ||||||||
| APT85GR120J | IGBT MOD 1200V 116A 543W SOT227 | Microsemi Corporation | SOT-227-4, miniBLOC | 116A | 1200V | 543W | Chassis Mount | Single | -55°C ~ 150°C (TJ) | SOT-227 | NPT | 1mA | 3.2V @ 15V, 85A | 8.4nF @ 25V | Standard | No |
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