• Ток коллектора (макс)
  • Граничное напряжение КЭ(макс)
  • Мощность - Макс.
Найдено: 69
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
BSM75GB170DN2HOSA1 IGBT MOD 1700V 110A 625W Infineon Technologies Module 110A 1700V 625W Chassis Mount Half Bridge 150°C (TJ) Module 3.9V @ 15V, 75A 11nF @ 25V Standard No
MWI75-12T8T IGBT MODULE 1200V 110A 360W E3 IXYS E3 110A 1200V 360W Chassis Mount Three Phase Inverter -40°C ~ 125°C (TJ) E3 Trench 3mA 2.1V @ 15V, 75A 5.35nF @ 25V Standard Yes
MUBW75-12T8 IGBT MODULE 1200V 110A 355W E3 IXYS E3 110A 1200V 355W Chassis Mount Three Phase Inverter with Brake -40°C ~ 125°C (TJ) E3 Trench 4mA 2.15V @ 15V, 75A 5.35nF @ 25V Three Phase Bridge Rectifier Yes
APTGF90A60TG IGBT MODULE 600V 110A 416W SP4 Microchip Technology SP4 110A 600V 416W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) SP4 NPT 250µA 2.5V @ 15V, 90A 4.3nF @ 25V Standard Yes
MSCGLQ50A120CTBL1NG PM-IGBT-SBD-BL1 Microchip Technology Module 110A 1200V 375W Chassis Mount Half Bridge -55°C ~ 175°C (TJ) 25µA 2.4V @ 15V, 50A 2.77nF @ 25V Standard Yes
MSCGLQ50DU120CTBL1NG PM-IGBT-SBD-BL1 Microchip Technology Module 110A 1200V 375W Chassis Mount Half Bridge -55°C ~ 175°C (TJ) 25µA 2.4V @ 15V, 50A 2.77nF @ 25V Standard Yes
APTGL90DDA120T3G IGBT MODULE 1200V 110A 385W SP3 Microchip Technology SP3 110A 1200V 385W Chassis Mount Dual Boost Chopper -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 2.25V @ 15V, 75A 4.4nF @ 25V Standard Yes
APTGT75SK120T1G IGBT MODULE 1200V 110A 357W SP1 Microsemi Corporation SP1 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP1 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGF90SK60T1G IGBT MODULE 600V 110A 416W SP1 Microsemi Corporation SP1 110A 600V 416W Chassis Mount Single SP1 NPT 250µA 2.5V @ 15V, 90A 4.3nF @ 25V Standard Yes
APT50GT60BRG IGBT 600V 110A 446W TO247 Microsemi Corporation TO-247-3 110A 600V 446W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard NPT 2.5V @ 15V, 50A 400V, 50A, 4.3Ohm, 15V 150A 995µJ (on), 1070µJ (off) 240nC 14ns/240ns Thunderbolt IGBT®
APTGF90DA60TG IGBT MODULE 600V 110A 416W SP4 Microsemi Corporation SP4 110A 600V 416W Chassis Mount Single -40°C ~ 150°C (TJ) SP4 NPT 250µA 2.5V @ 15V, 90A 4.3nF @ 25V Standard Yes
APTGL90SK120T1G IGBT MODULE 1200V 110A 385W SP1 Microsemi Corporation SP1 110A 1200V 385W Chassis Mount Single -40°C ~ 175°C (TJ) SP1 Trench Field Stop 250µA 2.25V @ 15V, 75A 4.4nF @ 25V Standard Yes
APTGF90TA60PG IGBT MODULE 600V 110A 416W SP6P Microsemi Corporation SP6 110A 600V 416W Chassis Mount Three Phase SP6-P NPT 250µA 2.5V @ 15V, 90A 4.3nF @ 25V Standard No
APTGF90SK60TG IGBT MODULE 600V 110A 416W SP4 Microsemi Corporation SP4 110A 600V 416W Chassis Mount Single -40°C ~ 150°C (TJ) SP4 NPT 250µA 2.5V @ 15V, 90A 4.3nF @ 25V Standard Yes
STGY50NC60WD IGBT 600V 110A 278W MAX247 STMicroelectronics TO-247-3 110A 600V 278W Through Hole -55°C ~ 150°C (TJ) MAX247™ Standard 2.6V @ 15V, 40A 390V, 40A, 10Ohm, 15V 180A 55ns 365µJ (on), 560µJ (off) 195nC 52ns/240ns PowerMESH™