• Ток коллектора (макс)
  • Граничное напряжение КЭ(макс)
  • Мощность - Макс.
    • Тип корпуса
    • Входной каскад
    • IGBT Type
    • Обратный ток коллектора
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Время обратного восстановления (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Серия
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Списком Таблицей
Найдено: 69
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
IRGS4055PBF IGBT 300V 110A 255W D2PAK Infineon Technologies TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 110A 300V 255W Surface Mount -40°C ~ 150°C (TJ) D2PAK Standard Trench 2.1V @ 15V, 110A 180V, 35A, 10Ohm 132nC 44ns/245ns
IXBX75N170A IGBT 1700V 110A 1040W PLUS247 IXYS TO-247-3 Variant 110A 1700V 1040W Through Hole -55°C ~ 150°C (TJ) PLUS247™-3 Standard 6V @ 15V, 42A 1360V, 42A, 1Ohm, 15V 300A 360ns 3.8mJ (off) 358nC 26ns/418ns BIMOSFET™
IXXH40N65C4D1 DISC IGBT XPT-GENX4 TO-247AD IXYS TO-247-3 110A 650V 455W Through Hole -55°C ~ 175°C (TJ) TO-247 (IXTH) Standard PT 2.3V @ 15V, 40A 400V, 40A, 5Ohm, 15V 215A 62ns 1.6mJ (on), 420µJ (off) 68nC 20ns/100ns XPT™, GenX4™
IXSN55N120A IGBT MOD 1200V 110A 500W SOT227B IXYS SOT-227-4, miniBLOC 110A 1200V 500W Chassis Mount Single -55°C ~ 150°C (TJ) SOT-227B 1mA 4V @ 15V, 55A 8nF @ 25V Standard No
MWI75-12T7T IGBT MODULE 1200V 110A 355W E2 IXYS E2 110A 1200V 355W Chassis Mount Three Phase Inverter -40°C ~ 125°C (TJ) E2 Trench 4mA 2.15V @ 15V, 75A 5.35nF @ 25V Standard Yes
APTGT75SK120TG IGBT MODULE 1200V 110A 357W SP4 Microchip Technology SP4 110A 1200V 357W Chassis Mount Single -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APT50GT60BRG IGBT 600V 110A 446W TO247 Microchip Technology TO-247-3 110A 600V 446W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard NPT 2.5V @ 15V, 50A 400V, 50A, 4.3Ohm, 15V 150A 995µJ (on), 1070µJ (off) 240nC 14ns/240ns Thunderbolt IGBT®
APTGL90H120T3G IGBT MODULE 1200V 110A 385W SP3 Microchip Technology SP3 110A 1200V 385W Chassis Mount Full Bridge -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 2.25V @ 15V, 75A 4.4nF @ 25V Standard Yes
MSCGLQ50DH120CTBL2NG PM-IGBT-SBD-BL2 Microchip Technology Module 110A 1200V 375W Chassis Mount Asymmetrical Bridge -55°C ~ 175°C (TJ) 25µA 2.4V @ 15V, 50A 2.77nF @ 25V Standard Yes
APTGF90DA60CT1G IGBT MODULE 600V 110A 416W SP1 Microsemi Corporation SP1 110A 600V 416W Chassis Mount Single SP1 NPT 250µA 2.5V @ 15V, 100A 4.3nF @ 25V Standard Yes
APT50GT60BRDQ2G IGBT 600V 110A 446W TO247 Microsemi Corporation TO-247-3 110A 600V 446W Through Hole -55°C ~ 150°C (TJ) TO-247 [B] Standard NPT 2.5V @ 15V, 50A 400V, 50A, 5Ohm, 15V 150A 22ns 995µJ (on), 1070µJ (off) 240nC 14ns/240ns Thunderbolt IGBT®
APTGL90DA120T1G IGBT MODULE 1200V 110A 385W SP1 Microsemi Corporation SP1 110A 1200V 385W Chassis Mount Single -40°C ~ 175°C (TJ) SP1 Trench Field Stop 250µA 2.25V @ 15V, 75A 4.4nF @ 25V Standard Yes
APTGT75DH120T3G IGBT MODULE 1200V 110A 357W SP3 Microsemi Corporation SP3 110A 1200V 357W Chassis Mount Asymmetrical Bridge -40°C ~ 150°C (TJ) SP3 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
APTGT75H120TG IGBT MODULE 1200V 110A 357W SP4 Microsemi Corporation SP4 110A 1200V 357W Chassis Mount Full Bridge Inverter -40°C ~ 150°C (TJ) SP4 Trench Field Stop 250µA 2.1V @ 15V, 75A 5.34nF @ 25V Standard Yes
STGW50HF60SD IGBT 600V 110A 284W TO247 STMicroelectronics TO-247-3 110A 600V 284W Through Hole -55°C ~ 150°C (TJ) TO-247-3 Standard 1.45V @ 15V, 30A 400V, 30A, 10Ohm, 15V 130A 67ns 250µJ (on), 4.2mJ (off) 200nC 50ns/220ns
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  • 50
  • 100