• Ток коллектора (макс)
  • Граничное напряжение КЭ(макс)
  • Мощность - Макс.
    • Тип корпуса
    • Входной каскад
    • IGBT Type
    • Обратный ток коллектора
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Время обратного восстановления (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Серия
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Списком Таблицей
Найдено: 94
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
AOD5B65M1 IGBT 650V 5A TO252 Alpha & Omega Semiconductor Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 10A 650V 69W Surface Mount -55°C ~ 150°C (TJ) TO-252 (DPAK) Standard 1.98V @ 15V, 5A 400V, 5A, 60Ohm, 15V 15A 195ns 80µJ (on), 70µJ (off) 14nC 8.5ns/106ns Alpha IGBT™
AOD5B65N1 IGBT 650V 5A TO252 Alpha & Omega Semiconductor Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 10A 650V 52W Surface Mount -55°C ~ 150°C (TJ) TO-252 (DPAK) Standard 2.5V @ 15V, 5A 400V, 5A, 60Ohm, 15V 15A 170ns 81µJ (on), 49µJ (off) 9.2nC 8ns/73ns Alpha IGBT™
IGTP10N40A N CHANNEL IGBT FOR SWITCHING APP Harris Corporation TO-220-3 10A 400V Through Hole TO-220 Standard
IGTM10N40A N CHANNEL IGBT FOR SWITCHING APP Harris Corporation TO-204AA 10A 400V Through Hole TO-3 Standard
IGTP10N40 N CHANNEL IGBT FOR SWITCHING APP Harris Corporation TO-220-3 10A 400V Through Hole TO-220AB Standard
IGTH10N50 N-CHANNEL IGBT FOR SWITCHING APP Harris Corporation TO-218-3 Isolated Tab, TO-218AC 10A 500V Through Hole TO-218 Isolated Standard
SIGC12T60SNCX1SA3 IGBT 3 CHIP 600V WAFER Infineon Technologies Die 10A 600V Surface Mount -55°C ~ 150°C (TJ) Die Standard NPT 2.5V @ 15V, 10A 400V, 10A, 25Ohm, 15V 30A 29ns/266ns
SIGC12T60SNCX1SA4 IGBT 3 CHIP 600V WAFER Infineon Technologies Die 10A 600V Surface Mount -55°C ~ 150°C (TJ) Die Standard NPT 2.5V @ 15V, 10A 400V, 10A, 25Ohm, 15V 30A 29ns/266ns
IKA06N60TXKSA1 IGBT 600V 10A 28W TO220-3 Infineon Technologies TO-220-3 Full Pack 10A 600V 28W Through Hole -40°C ~ 175°C (TJ) PG-TO220-3-31 Standard Trench Field Stop 2.05V @ 15V, 6A 400V, 6A, 23Ohm, 15V 18A 123ns 200µJ 42nC 9.4ns/130ns TrenchStop™
SIGC11T60SNCX1SA1 IGBT 3 CHIP 600V WAFER Infineon Technologies Die 10A 600V Surface Mount -55°C ~ 150°C (TJ) Die Standard NPT 2.4V @ 15V, 10A 400V, 10A, 25Ohm, 15V 30A 28ns/198ns
SGF5N150UFTU IGBT 1500V 10A 62.5W TO3PF onsemi TO-3P-3 Full Pack 10A 1500V 62.5W Through Hole -55°C ~ 150°C (TJ) TO-3PF Standard 5.5V @ 10V, 5A 600V, 5A, 10Ohm, 10V 20A 190µJ (on), 100µJ (off) 30nC 10ns/30ns
STGB5H60DF TRENCH GATE FIELD-STOP IGBT, H S STMicroelectronics TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A 600V 88W Surface Mount -55°C ~ 175°C (TJ) D²PAK (TO-263) Standard Trench Field Stop 1.95V @ 15V, 5A 400V, 5A, 47Ohm, 15V 20A 134.5ns 56µJ (on), 78.5µJ (off) 43nC 30ns/140ns
STGD3NB60HDT4 IGBT 600V 10A 50W DPAK STMicroelectronics TO-252-3, DPak (2 Leads + Tab), SC-63 10A 600V 50W Surface Mount -55°C ~ 150°C (TJ) DPAK Standard 2.8V @ 15V, 3A 480V, 3A, 10Ohm, 15V 24A 95ns 33µJ (off) 21nC 5ns/53ns PowerMESH™
STGP3NB60HD IGBT 600V 10A 50W TO220 STMicroelectronics TO-220-3 10A 600V 50W Through Hole -55°C ~ 150°C (TJ) TO-220 Standard 2.8V @ 15V, 3A 480V, 3A, 10Ohm, 15V 24A 45ns 33µJ (off) 21nC 5ns/53ns PowerMESH™
STGD7NB120ST4 IGBT 1200V 10A 55W DPAK STMicroelectronics TO-252-3, DPak (2 Leads + Tab), SC-63 10A 1200V 55W Surface Mount DPAK Standard 2.1V @ 15V, 7A 960V, 7A, 1kOhm, 15V 20A 3.2µJ (on), 15mJ (off) 29nC 570ns/- PowerMESH™
  • 10
  • 15
  • 50
  • 100