• Ток коллектора (макс)
  • Граничное напряжение КЭ(макс)
  • Мощность - Макс.
Найдено: 94
Наименование Описание Производитель
Package / Case
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Конфигурация
Рабочая температура
Тип корпуса
Входной каскад
IGBT Type
Обратный ток коллектора
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
Время обратного восстановления (trr)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Серия
AOB5B65M1 IGBT 650V 5A TO263 Alpha & Omega Semiconductor Inc. TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A 650V 83W Surface Mount -55°C ~ 175°C (TJ) TO-263 (D2Pak) Standard 1.98V @ 15V, 5A 400V, 5A, 60Ohm, 15V 15A 195ns 80µJ (on), 70µJ (off) 14nC 8.5ns/106ns Alpha IGBT™
AOD5B65MQ1E IGBT 5A 650V TO252 Alpha & Omega Semiconductor Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 10A 650V 52W Surface Mount -55°C ~ 150°C (TJ) TO-252 (DPAK) Standard 2.7V @ 15V, 5A 400V, 5A, 60Ohm, 15V 15A 74ns 90µJ (on), 60µJ (off) 8.8 nC 7ns/78ns AlphaIGBT™
AOT5B65M1 IGBT 650V 5A TO220 Alpha & Omega Semiconductor Inc. TO-220-3 10A 650V 83W Through Hole -55°C ~ 175°C (TJ) TO-220 Standard 1.98V @ 15V, 5A 400V, 5A, 60Ohm, 15V 15A 195ns 80µJ (on), 70µJ (off) 14nC 8.5ns/106ns Alpha IGBT™
ISL9V2040S3ST INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A 430V 130W Surface Mount -40°C ~ 175°C (TJ) D2PAK (TO-263) Logic 1.9V @ 4V, 6A 300V, 1kOhm, 5V 12nC -/3.64µs EcoSPARK®
SGS5N150UFTU IGBT, 10A, 1500V, N-CHANNEL Fairchild Semiconductor TO-220-3 Full Pack 10A 1500V 50W Through Hole -55°C ~ 150°C (TJ) TO-220F-3 Standard 5.5V @ 10V, 5A 600V, 5A, 10Ohm, 10V 20A 190µJ (on), 100µJ (off) 30nC 10ns/30ns
HGTP10N40C1 10A, 400V, N-CHANNEL IGBT Harris Corporation TO-220-3 10A 400V 60W Through Hole -55°C ~ 150°C (TJ) TO-220-3 Standard 3.2V @ 20V, 17.5A 17.5 A 19nC
HGTP10N40E1 10A, 400V, N-CHANNEL IGBT Harris Corporation TO-220-3 10A 400V 60W Through Hole -55°C ~ 150°C (TJ) TO-220-3 Standard 3.2V @ 20V, 17.5A 17.5 A 19nC
SIGC11T60SNCX1SA2 IGBT 3 CHIP 600V WAFER Infineon Technologies Die 10A 600V Surface Mount -55°C ~ 150°C (TJ) Die Standard NPT 2.4V @ 15V, 10A 400V, 10A, 25Ohm, 15V 30A 28ns/198ns
IXGT10N170A IGBT 1700V 10A 140W TO268 IXYS TO-268-3, D³Pak (2 Leads + Tab), TO-268AA 10A 1700V 140W Surface Mount -55°C ~ 150°C (TJ) TO-268AA Standard NPT 6V @ 15V, 5A 850V, 10A, 22Ohm, 15V 20A 380µJ (off) 29nC 46ns/190ns
ISL9V2040D3STV IGBT, 430V, 10A, 1.95V, 200MJ, D onsemi TO-252-3, DPak (2 Leads + Tab), SC-63 10A 430V 130W Surface Mount -40°C ~ 175°C (TJ) TO-252AA Logic 1.9V @ 4V, 6A 12nC 610ns/3.64µs EcoSPARK®
RJH60A01RDPD-A0#J2 IGBT 600V 5A Renesas Electronics America TO-252-3, DPak (2 Leads + Tab), SC-63 10A 600V 29.4W Surface Mount 150°C (TJ) TO-252 Standard Trench 2.3V @ 15V, 5A 300V, 5A, 5Ohm, 15V 100ns 130µJ (on), 70µJ (off) 11nC 30ns/40ns
ISL9V2040S3S N-CHANNEL IGBT Rochester Electronics, LLC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A 430V 130W Surface Mount -40°C ~ 175°C (TJ) TO-263AB Logic 1.9V @ 4V, 6A 300V, 1kOhm, 5V 12nC -/3.64µs EcoSPARK®
STGP3NB60K IGBT 600V 10A 50W TO220 STMicroelectronics TO-220-3 10A 600V 50W Through Hole 150°C (TJ) TO-220 Standard 2.8V @ 15V, 3A 480V, 3A, 10Ohm, 15V 24A 58µJ (off) 14nC 14ns/33ns PowerMESH™
STGD5NB120SZT4 IGBT 1200V 10A 75W DPAK STMicroelectronics TO-252-3, DPak (2 Leads + Tab), SC-63 10A 1200V 75W Surface Mount -55°C ~ 150°C (TJ) DPAK Standard 2V @ 15V, 5A 960V, 5A, 1kOhm, 15V 10A 2.59mJ (on), 9mJ (off) 690ns/12.1µs PowerMESH™
GT10J312(Q) IGBT 600V 10A 60W TO220SM Toshiba Semiconductor and Storage TO-252-3, DPak (2 Leads + Tab), SC-63 10A 600V 60W Surface Mount 150°C (TJ) TO-220SM Standard 2.7V @ 15V, 10A 300V, 10A, 100Ohm, 15V 20A 200ns 400ns/400ns