- Тип корпуса
- Производитель
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI5445BDC-T1-GE3 | MOSFET P-CH 8V 5.2A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 8V | 5.2A (Ta) | 33mOhm @ 5.2A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 21nC @ 4.5V | ±8V | TrenchFET® | |||
| SI5853DDC-T1-E3 | MOSFET P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta), 3.1W (Tc) | 20V | 4A (Tc) | Schottky Diode (Isolated) | 105mOhm @ 2.9A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 12nC @ 8V | 320pF @ 10V | ±8V | LITTLE FOOT® | |
| SI5509DC-T1-GE3 | MOSFET N/P-CH 20V 6.1A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 4.5W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 6.1A, 4.8A | Logic Level Gate | 52mOhm @ 5A, 4.5V | 2V @ 250µA | 6.6nC @ 5V | 455pF @ 10V | TrenchFET® | ||||
| SI5440DC-T1-GE3 | MOSFET N-CH 30V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 6.3W (Tc) | 30V | 6A (Tc) | 19mOhm @ 9.1A, 10V | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1200pF @ 10V | ±20V | TrenchFET® | ||
| SI5424DC-T1-E3 | MOSFET N-CH 30V 6A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 6.25W (Tc) | 30V | 6A (Tc) | 24mOhm @ 4.8A, 10V | 4.5V, 10V | 2.3V @ 250µA | 32nC @ 10V | 950pF @ 15V | ±25V | TrenchFET® | ||
| SI5904DC-T1-E3 | MOSFET 2N-CH 20V 3.1A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 3.1A | Logic Level Gate | 75mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 6nC @ 4.5V | TrenchFET® | |||||
| SI5441DC-T1-E3 | MOSFET P-CH 20V 3.9A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 20V | 3.9A (Ta) | 55mOhm @ 3.9A, 4.5V | 2.5V, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | ±12V | TrenchFET® | |||
| SI5902BDC-T1-GE3 | MOSFET 2N-CH 30V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.12W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 4A | Logic Level Gate | 65mOhm @ 3.1A, 10V | 3V @ 250µA | 7nC @ 10V | 220pF @ 15V | TrenchFET® | ||||
| SI5908DC-T1-GE3 | MOSFET 2N-CH 20V 4.4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 4.4A | Logic Level Gate | 40mOhm @ 4.4A, 4.5V | 1V @ 250µA | 7.5nC @ 4.5V | TrenchFET® | |||||
| SI5933DC-T1-GE3 | MOSFET 2P-CH 20V 2.7A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.7A | Logic Level Gate | 110mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | TrenchFET® | |||||
| SI5435BDC-T1-GE3 | MOSFET P-CH 30V 4.3A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 30V | 4.3A (Ta) | 45mOhm @ 4.3A, 10V | 4.5V, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | TrenchFET® | |||
| SI5449DC-T1-GE3 | MOSFET P-CH 30V 3.1A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.3W (Ta) | 30V | 3.1A (Ta) | 85mOhm @ 3.1A, 4.5V | 2.5V, 4.5V | 600mV @ 250µA (Min) | 11nC @ 4.5V | ±12V | TrenchFET® |
- 10
- 15
- 50
- 100