• Тип корпуса
  • Производитель
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 102
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
SI5504BDC-T1-GE3 MOSFET N/P-CH 30V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.12W, 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 30V 4A, 3.7A Logic Level Gate 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V TrenchFET®
SI5933DC-T1-E3 MOSFET 2P-CH 20V 2.7A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 2.7A Logic Level Gate 110mOhm @ 2.7A, 4.5V 1V @ 250µA 7.7nC @ 4.5V TrenchFET®
SI5915BDC-T1-GE3 MOSFET 2P-CH 8V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 8V 4A Logic Level Gate 70mOhm @ 3.3A, 4.5V 1V @ 250µA 14nC @ 8V 420pF @ 4V TrenchFET®
SI5933CDC-T1-E3 MOSFET 2P-CH 20V 3.7A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 2.8W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 3.7A Standard 144mOhm @ 2.5A, 4.5V 1V @ 250µA 6.8nC @ 5V 276pF @ 10V TrenchFET®
SI5904DC-T1-GE3 MOSFET 2N-CH 20V 3.1A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 3.1A Logic Level Gate 75mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V TrenchFET®
SI5433BDC-T1-GE3 MOSFET P-CH 20V 4.8A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 20V 4.8A (Ta) 37mOhm @ 4.8A, 4.5V 1.8V, 4.5V 1V @ 250µA 22nC @ 4.5V ±8V TrenchFET®
SI5402BDC-T1-GE3 MOSFET N-CH 30V 4.9A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.3W (Ta) 30V 4.9A (Ta) 35mOhm @ 4.9A, 10V 4.5V, 10V 3V @ 250µA 20nC @ 10V ±20V TrenchFET®
SI5913DC-T1-GE3 MOSFET P-CH 20V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.7W (Ta), 3.1W (Tc) 20V 4A (Tc) Schottky Diode (Isolated) 84mOhm @ 3.7A, 10V 2.5V, 10V 1.5V @ 250µA 12nC @ 10V 330pF @ 10V ±12V LITTLE FOOT®
SI5915BDC-T1-E3 MOSFET 2P-CH 8V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 8V 4A Logic Level Gate 70mOhm @ 3.3A, 4.5V 1V @ 250µA 14nC @ 8V 420pF @ 4V TrenchFET®
SI5499DC-T1-GE3 MOSFET P-CH 8V 6A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta), 6.2W (Tc) 8V 6A (Tc) 36mOhm @ 5.1A, 4.5V 1.5V, 4.5V 800mV @ 250µA 35nC @ 8V 1290pF @ 4V ±5V TrenchFET®
SI5513DC-T1-E3 MOSFET N/P-CH 20V 3.1A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 20V 3.1A, 2.1A Logic Level Gate 75mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V TrenchFET®
SI5935CDC-T1-E3 MOSFET 2P-CH 20V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 4A Standard 100mOhm @ 3.1A, 4.5V 1V @ 250µA 11nC @ 5V 455pF @ 10V TrenchFET®
SI5902BDC-T1-E3 MOSFET 2N-CH 30V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.12W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 4A (Tc) Logic Level Gate 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V TrenchFET®
SI5513DC-T1-GE3 MOSFET N/P-CH 20V 3.1A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 20V 3.1A, 2.1A Logic Level Gate 75mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V TrenchFET®
SI5473DC-T1-GE3 MOSFET P-CH 12V 5.9A 1206-8 Vishay Siliconix 1206-8 ChipFET™ Surface Mount 8-SMD, Flat Lead MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.3W (Ta) 12V 5.9A (Ta) 27mOhm @ 5.9A, 4.5V 1.8V, 4.5V 1V @ 250µA 32nC @ 4.5V ±8V TrenchFET®
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