• Тип корпуса
  • Производитель
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 13
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Серия
FDMD8900 POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor 12-Power3.3x5 2.1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 19A, 17A Standard 4mOhm @ 19A, 10V 2.5V @ 250µA 35nC @ 10V 2605pF @ 15V
FDMD8280 SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 80V 11A Standard 8.2mOhm @ 11A, 10V 4V @ 250µA 44nC @ 10V 3050pF @ 40V PowerTrench®
FDMD82100 SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 100V 7A Standard 19mOhm @ 7A, 10V 4V @ 250µA 17nC @ 10V 1070pF @ 50V PowerTrench®
FDMD8260LET60 POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor 12-Power3.3x5 1.1W Surface Mount 12-PowerWDFN -55°C ~ 175°C (TJ) 2 N-Channel (Dual) 60V 15A Standard 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V PowerTrench®
FDMD8260L SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 60V 15A Standard 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V PowerTrench®
FDMD82100L MOSFET 2N-CH 100V 7A 6-MLP onsemi 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 100V 7A Logic Level Gate 19.5mOhm @ 7A, 10V 3V @ 250µA 24nC @ 10V 1585pF @ 50V PowerTrench®
FDMD8280 MOSFET 2N-CH 80V 11A 12POWER onsemi 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 80V 11A Standard 8.2mOhm @ 11A, 10V 4V @ 250µA 44nC @ 10V 3050pF @ 40V PowerTrench®
FDMD8240L MOSFET 2N-CH 40V 23A onsemi 12-Power3.3x5 2.1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 40V 23A Standard 2.6mOhm @ 23A, 10V 3V @ 250µA 56nC @ 10V 4230pF @ 20V PowerTrench®
FDMD8260LET60 MOSFET 2N-CH 60V 15A 12POWER onsemi 12-Power3.3x5 1.1W Surface Mount 12-PowerWDFN -55°C ~ 175°C (TJ) 2 N-Channel (Dual) 60V 15A Standard 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V PowerTrench®
FDMD8260L MOSFET 2N-CH 60V 15A 12POWER onsemi 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 60V 15A Standard 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V PowerTrench®
FDMD8240LET40 MOSFET 2N-CH 40V 24A POWER3.3X5 onsemi 12-Power3.3x5 50W Surface Mount 12-PowerWDFN -55°C ~ 175°C (TJ) 2 N-Channel (Dual) 40V 24A Standard 2.6mOhm @ 23A, 10V 3V @ 250µA 56nC @ 10V 4230pF @ 20V PowerTrench®
FDMD8900 MOSFET 2N-CH 30V 19A/17A 12POWER onsemi 12-Power3.3x5 2.1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 19A, 17A Standard 4mOhm @ 19A, 10V 2.5V @ 250µA 35nC @ 10V 2605pF @ 15V
FDMD82100 MOSFET 2N-CH 100V 7A 12POWER onsemi 12-Power3.3x5 1W Surface Mount 12-PowerWDFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 100V 7A Standard 19mOhm @ 7A, 10V 4V @ 250µA 17nC @ 10V 1070pF @ 50V PowerTrench®
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