- Тип корпуса
- Производитель
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIE830DF-T1-E3 | MOSFET N-CH 30V 50A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 30V | 50A (Tc) | 4.2mOhm @ 16A, 10V | 4.5V, 10V | 2V @ 250µA | 115nC @ 10V | 5500pF @ 15V | ±12V | WFET® |
| SIE830DF-T1-GE3 | MOSFET N-CH 30V 50A POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 30V | 50A (Tc) | 4.2mOhm @ 16A, 10V | 4.5V, 10V | 2V @ 250µA | 115nC @ 10V | 5500pF @ 15V | ±12V | WFET® |
| SIE820DF-T1-GE3 | MOSFET N-CH 20V 50A POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 20V | 50A (Tc) | 3.5mOhm @ 18A, 4.5V | 2.5V, 4.5V | 2V @ 250µA | 143nC @ 10V | 4300pF @ 10V | ±12V | TrenchFET® |
| SIE820DF-T1-E3 | MOSFET N-CH 20V 50A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 20V | 50A (Tc) | 3.5mOhm @ 18A, 4.5V | 2.5V, 4.5V | 2V @ 250µA | 143nC @ 10V | 4300pF @ 10V | ±12V | TrenchFET® |
| SIE822DF-T1-GE3 | MOSFET N-CH 20V 50A POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 20V | 50A (Tc) | 3.4mOhm @ 18.3A, 10V | 4.5V, 10V | 3V @ 250µA | 78nC @ 10V | 4200pF @ 10V | ±20V | TrenchFET® |
| SIE822DF-T1-E3 | MOSFET N-CH 20V 50A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 20V | 50A (Tc) | 3.4mOhm @ 18.3A, 10V | 4.5V, 10V | 3V @ 250µA | 78nC @ 10V | 4200pF @ 10V | ±20V | TrenchFET® |
| SIE832DF-T1-GE3 | MOSFET N-CH 40V 50A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 40V | 50A (Tc) | 5.5mOhm @ 14A, 10V | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3800pF @ 20V | ±20V | TrenchFET® |
| SIE800DF-T1-GE3 | MOSFET N-CH 30V 50A POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 30V | 50A (Tc) | 7.2mOhm @ 11A, 10V | 4.5V, 10V | 3V @ 250µA | 35nC @ 10V | 1600pF @ 15V | ±20V | TrenchFET® |
| SIE800DF-T1-E3 | MOSFET N-CH 30V 50A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 30V | 50A (Tc) | 7.2mOhm @ 11A, 10V | 4.5V, 10V | 3V @ 250µA | 35nC @ 10V | 1600pF @ 15V | ±20V | TrenchFET® |
| SIE832DF-T1-E3 | MOSFET N-CH 40V 50A 10-POLARPAK | Vishay Siliconix | 10-PolarPAK® (S) | Surface Mount | 10-PolarPAK® (S) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 5.2W (Ta), 104W (Tc) | 40V | 50A (Tc) | 5.5mOhm @ 14A, 10V | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3800pF @ 20V | ±20V | TrenchFET® |
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