-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Мощность - Макс.
|
Вид монтажа
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Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
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MSCSM70TAM10CTPAG | PM-MOSFET-SIC-SBD~-SP6P | Microchip Technology | SP6-P | 674W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 700V | 238A (Tc) | Silicon Carbide (SiC) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | |
APTM100TA35SCTPG | MOSFET 6N-CH 1000V 22A SP6P | Microchip Technology | SP6-P | 390W | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1000V (1kV) | 22A | Standard | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | POWER MOS 7® |
MSCSM120TAM11CTPAG | PM-MOSFET-SIC-SBD~-SP6P | Microchip Technology | SP6-P | 1.042kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 251A (Tc) | Silicon Carbide (SiC) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | |
APTC80TA15PG | MOSFET 6N-CH 800V 28A SP6P | Microchip Technology | SP6-P | 277W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |
APTM100TA35FPG | MOSFET 6N-CH 1000V 22A SP6-P | Microchip Technology | SP6-P | 390W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1000V (1kV) | 22A | Standard | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |
APTMC120TAM17CTPAG | MOSFET 6N-CH 1200V 147A SP6P | Microchip Technology | SP6-P | 625W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 147A (Tc) | Silicon Carbide (SiC) | 17mOhm @ 100A, 20V | 2.4V @ 20mA (Typ) | 322nC @ 20V | 5600pF @ 1000V | |
APTC60TDUM35PG | MOSFET 6N-CH 600V 72A SP6-P | Microchip Technology | SP6-P | 416W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 600V | 72A | Standard | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | |
MSCSM120TAM16CTPAG | PM-MOSFET-SIC-SBD~-SP6P | Microchip Technology | SP6-P | 728W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 171A (Tc) | Silicon Carbide (SiC) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | |
APTM20TAM16FPG | MOSFET 6N-CH 200V 104A SP6-P | Microchip Technology | SP6-P | 390W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 200V | 104A | Standard | 19mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | |
APTM10TAM19FPG | MOSFET 6N-CH 100V 70A SP6-P | Microchip Technology | SP6-P | 208W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 100V | 70A | Standard | 21mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | |
APTMC120TAM12CTPAG | MOSFET 6N-CH 1200V 220A SP6P | Microchip Technology | SP6-P | 925W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 220A (Tc) | Silicon Carbide (SiC) | 12mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | |
APTM08TAM04PG | MOSFET 6N-CH 75V 120A SP6-P | Microchip Technology | SP6-P | 138W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 75V | 120A | Standard | 4.5mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | |
APTMC120TAM33CTPAG | MOSFET 6N-CH 1200V 78A SP6-P | Microchip Technology | SP6-P | 370W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 78A (Tc) | Silicon Carbide (SiC) | 33mOhm @ 60A, 20V | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V | |
APTC60TAM24TPG | MOSFET 6N-CH 600V 95A SP6-P | Microchip Technology | SP6-P | 462W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ |
APTC80TDU15PG | MOSFET 6N-CH 800V 28A SP6-P | Microchip Technology | SP6-P | 277W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V |
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