-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSCSM70VM19C3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 365W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 700V | 124A (Tc) | Silicon Carbide (SiC) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V |
| MSCC60VRM99CT3AG | PM-MOSFET-COOLMOS-SBD-SP3F | Microchip Technology | SP3F | Chassis Mount | Module | 600V | 19A (Tc) | ||||||||
| MSCSM120HM31CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 395W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel | 1200V (1.2kV) | 89A (Tc) | Silicon Carbide (SiC) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V |
| MSCSM170DUM15T3AG | PM-MOSFET-SIC-SP3F | Microchip Technology | SP3F | 862W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 1700V (1.7kV) | 181A (Tc) | Silicon Carbide (SiC) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V |
| MSCSM70AM10CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 690W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 700V | 241A (Tc) | Silicon Carbide (SiC) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V |
| MSCSM120HM50CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 245W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel | 1200V (1.2kV) | 55A (Tc) | Silicon Carbide (SiC) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V |
| MSCSM70DUM10T3AG | PM-MOSFET-SIC-SP3F | Microchip Technology | SP3F | 690W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 700V | 241A (Tc) | Silicon Carbide (SiC) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V |
| MSCSM70HM19CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 365W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel | 700V | 124A (Tc) | Silicon Carbide (SiC) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V |
| MSCMC90AM12C3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | Chassis Mount | Module | 900V | 110A (Tc) | ||||||||
| MSCSM70AM07CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 988W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 700V | 353A (Tc) | Silicon Carbide (SiC) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V |
| MSCSM70TAM19CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 365W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 700V | 124A (Tc) | Silicon Carbide (SiC) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V |
| MSCSM120TAM31CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 395W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 89A (Tc) | Silicon Carbide (SiC) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V |
| MSCSM70DUM07T3AG | PM-MOSFET-SIC-SP3F | Microchip Technology | SP3F | 988W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 700V | 353A (Tc) | Silicon Carbide (SiC) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V |
| MSCSM120AM11CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 1.067kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 254A (Tc) | Silicon Carbide (SiC) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V |
| MSCSM120DUM11T3AG | PM-MOSFET-SIC-SP3F | Microchip Technology | SP3F | 1067W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 254A (Tc) | Silicon Carbide (SiC) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V |
- 10
- 15
- 50
- 100