-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTC60VDAM24T3G | MOSFET 2N-CH 600V 95A SP3 | Microchip Technology | SP3 | 462W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ |
| APTM100H46FT3G | MOSFET 4N-CH 1000V 19A SP3 | Microchip Technology | SP3 | 357W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1000V (1kV) | 19A | Standard | 552mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V | POWER MOS 8™ |
| APTC60HM35T3G | MOSFET 4N-CH 600V 72A SP3 | Microchip Technology | SP3 | 416W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 600V | 72A | Standard | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | |
| APTMC120HRM40CT3AG | POWER MODULE - SIC MOSFET | Microchip Technology | SP3 | 375W | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 73A (Tc) | Silicon Carbide (SiC) | 34mOhm @ 50A, 20V | 3V @ 12.5mA | 161nC @ 5V | 2788pF @ 1000V | |
| APTMC120AM25CT3AG | MOSFET 2N-CH 1200V 105A SP3F | Microchip Technology | SP3 | 500W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 113A (Tc) | Silicon Carbide (SiC) | 25mOhm @ 80A, 20V | 2.2V @ 4mA (Typ) | 197nC @ 20V | 3800pF @ 1000V | |
| APTM50H14FT3G | MOSFET 4N-CH 500V 26A SP3 | Microchip Technology | SP3 | 208W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 26A | Standard | 168mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | |
| APTC60HM70T3G | MOSFET 4N-CH 600V 39A SP3 | Microchip Technology | SP3 | 250W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 600V | 39A | Standard | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | |
| APTM10DSKM09T3G | MOSFET 2N-CH 100V 139A SP3 | Microchip Technology | SP3 | 390W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 100V | 139A | Standard | 10mOhm @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | |
| APTC60DSKM24T3G | MOSFET 2N-CH 600V 95A SP3 | Microchip Technology | SP3 | 462W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N Channel (Dual Buck Chopper) | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ |
| APTM50HM75FT3G | MOSFET 4N-CH 500V 46A SP3 | Microchip Technology | SP3 | 357W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 46A | Standard | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | |
| APTMC120AM09CT3AG | MOSFET 2N-CH 1200V 295A SP3F | Microchip Technology | SP3 | 1250W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 295A (Tc) | Silicon Carbide (SiC) | 9mOhm @ 200A, 20V | 2.4V @ 40mA (Typ) | 644nC @ 20V | 11000pF @ 1000V | |
| APTC80DDA15T3G | MOSFET 2N-CH 800V 28A SP3 | Microchip Technology | SP3 | 277W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |
| APTM100DSK35T3G | MOSFET 2N-CH 1000V 22A SP3 | Microchip Technology | SP3 | 390W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1000V (1kV) | 22A | Standard | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |
| APTM50HM65FT3G | MOSFET 4N-CH 500V 51A SP3 | Microchip Technology | SP3 | 390W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 51A | Standard | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | |
| APTMC120AM12CT3AG | MOSFET 2N-CH 1200V 220A SP3F | Microchip Technology | SP3 | 925W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 220A (Tc) | Silicon Carbide (SiC) | 12mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V |
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