• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 38
  • APTC60VDAM24T3G
    MOSFET 2N-CH 600V 95A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • APTM100H46FT3G
    MOSFET 4N-CH 1000V 19A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 8™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 19A
    • Rds On (Max) @ Id, Vgs: 552mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
    • Power - Max: 357W
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  • APTC60HM35T3G
    MOSFET 4N-CH 600V 72A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 72A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
    • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Power - Max: 416W
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  • APTMC120HRM40CT3AG
    POWER MODULE - SIC MOSFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 3V @ 12.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
    • Power - Max: 375W
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  • APTMC120AM25CT3AG
    MOSFET 2N-CH 1200V 105A SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V
    • Power - Max: 500W
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  • APTM50H14FT3G
    MOSFET 4N-CH 500V 26A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 26A
    • Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
    • Power - Max: 208W
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  • APTC60HM70T3G
    MOSFET 4N-CH 600V 39A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 39A
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Power - Max: 250W
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  • APTM10DSKM09T3G
    MOSFET 2N-CH 100V 139A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 139A
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
    • Power - Max: 390W
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  • APTC60DSKM24T3G
    MOSFET 2N-CH 600V 95A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N Channel (Dual Buck Chopper)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • APTM50HM75FT3G
    MOSFET 4N-CH 500V 46A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 46A
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
    • Power - Max: 357W
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  • APTMC120AM09CT3AG
    MOSFET 2N-CH 1200V 295A SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 200A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
    • Power - Max: 1250W
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  • APTC80DDA15T3G
    MOSFET 2N-CH 800V 28A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 28A
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
    • Power - Max: 277W
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  • APTM100DSK35T3G
    MOSFET 2N-CH 1000V 22A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 22A
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
    • Power - Max: 390W
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  • APTM50HM65FT3G
    MOSFET 4N-CH 500V 51A SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 51A
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Power - Max: 390W
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  • APTMC120AM12CT3AG
    MOSFET 2N-CH 1200V 220A SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
    • Power - Max: 925W
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