Найдено: 20
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Рабочая температура
Тип канала
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Серия
APTC60VDAM45T1G MOSFET 2N-CH 600V 49A SP1 Microchip Technology SP1 250W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N-Channel (Dual) 600V 49A Super Junction 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V CoolMOS™
APTC60AM35T1G MOSFET 2N-CH 600V 72A SP1 Microchip Technology SP1 416W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 600V 72A Standard 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V
APTM60A11FT1G MOSFET 2N-CH 600V 40A SP1 Microchip Technology SP1 390W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 600V 40A Standard 132mOhm @ 33A, 10V 5V @ 2.5mA 330nC @ 10V 10552pF @ 25V
APTMC170AM60CT1AG MOSFET 2N-CH 1700V 53A SP1 Microchip Technology SP1 350W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N Channel (Phase Leg) 1700V (1.7kV) 50A (Tc) Silicon Carbide (SiC) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V
APTC80H15T1G MOSFET 4N-CH 800V 28A SP1 Microchip Technology SP1 277W Chassis Mount SP1 -40°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 800V 28A Standard 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V