• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 20
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
APTC60VDAM45T1G MOSFET 2N-CH 600V 49A SP1 Microchip Technology SP1 250W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N-Channel (Dual) 600V 49A Super Junction 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V CoolMOS™
APTC60AM35T1G MOSFET 2N-CH 600V 72A SP1 Microchip Technology SP1 416W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 600V 72A Standard 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V
APTM60A11FT1G MOSFET 2N-CH 600V 40A SP1 Microchip Technology SP1 390W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 600V 40A Standard 132mOhm @ 33A, 10V 5V @ 2.5mA 330nC @ 10V 10552pF @ 25V
APTMC170AM60CT1AG MOSFET 2N-CH 1700V 53A SP1 Microchip Technology SP1 350W Chassis Mount SP1 -40°C ~ 150°C (TJ) 2 N Channel (Phase Leg) 1700V (1.7kV) 50A (Tc) Silicon Carbide (SiC) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V
APTC80H15T1G MOSFET 4N-CH 800V 28A SP1 Microchip Technology SP1 277W Chassis Mount SP1 -40°C ~ 150°C (TJ) 4 N-Channel (Half Bridge) 800V 28A Standard 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V
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