- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DN2625K4-G | MOSFET N-CH 250V 1.1A 3DPAK | Microchip Technology | TO-252, (D-Pak) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 250V | 1.1A (Tj) | Depletion Mode | 3.5Ohm @ 1A, 0V | 0V | 7.04nC @ 1.5V | 1000pF @ 25V | ±20V | ||||||||||||
| APTM10AM05FTG | MOSFET 2N-CH 100V 278A SP4 | Microchip Technology | SP4 | 780W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 100V | 278A | Standard | 5mOhm @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | |||||||||||||
| MSCSM170AM23CT1AG | PM-MOSFET-SIC-SBD-SP1F | Microchip Technology | 602W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 124A (Tc) | Silicon Carbide (SiC) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | ||||||||||||||
| TN0104N3-G | MOSFET N-CH 40V 0.45A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 40V | 450mA (Ta) | 1.8Ohm @ 1A, 10V | 3V, 10V | 1.6V @ 500µA | 70pF @ 20V | ±20V | ||||||||||||
| MIC5018BM4TR | HIGH-SIDE MOSFET DRIVER | Microchip Technology | ||||||||||||||||||||||||||
| APTMC60TLM14CAG | MOSFET 4N-CH 1200V 219A SP6C | Microchip Technology | SP6 | 925W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 4 N-Channel (Three Level Inverter) | 1200V (1.2kV) | 219A (Tc) | Silicon Carbide (SiC) | 12mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | |||||||||||||
| LND150N3-G-P002 | MOSFET N-CH 500V 30MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Ta) | 500V | 30mA (Tj) | Depletion Mode | 1000Ohm @ 500µA, 0V | 0V | 10pF @ 25V | ±20V | ||||||||||||
| APTMC120TAM17CTPAG | MOSFET 6N-CH 1200V 147A SP6P | Microchip Technology | SP6-P | 625W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 147A (Tc) | Silicon Carbide (SiC) | 17mOhm @ 100A, 20V | 2.4V @ 20mA (Typ) | 322nC @ 20V | 5600pF @ 1000V | |||||||||||||
| APTM50HM75STG | MOSFET 4N-CH 500V 46A SP4 | Microchip Technology | SP4 | 357W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 46A | Standard | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | |||||||||||||
| VN2210N2 | MOSFET N-CH 100V 1.7A TO39-3 | Microchip Technology | TO-39 | Through Hole | TO-205AD, TO-39-3 Metal Can | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360mW (Tc) | 100V | 1.7A (Tj) | 350mOhm @ 4A, 10V | 5V, 10V | 2.4V @ 10mA | 500pF @ 25V | ±20V | ||||||||||||
| VN0606L-G | MOSFET N-CH 60V 330MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 330mA (Tj) | 3Ohm @ 1A, 10V | 10V | 2V @ 1mA | 50pF @ 25V | ±30V | ||||||||||||
| APTMC120AM16CD3AG | MOSFET 2N-CH 1200V 131A D3 | Microchip Technology | D3 | 625W | Chassis Mount | D-3 Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 131A (Tc) | Silicon Carbide (SiC) | 20mOhm @ 100A, 20V | 2.2V @ 5mA (Typ) | 246nC @ 20V | 4750pF @ 1000V | |||||||||||||
| APTM50HM65FTG | MOSFET 4N-CH 500V 51A SP4 | Microchip Technology | SP4 | 390W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 51A | Standard | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | |||||||||||||
| ARF476FL | RF FET N CH 500V 10A PSH PUL PR | Microchip Technology | 900W | 128MHz | 500V | 10A | 2 N-Channel (Dual) Common Source | 16dB | 150V | 15mA | ||||||||||||||||||
| APTM50DDA10T3G | MOSFET 2N-CH 500V 37A SP3 | Microchip Technology | SP3 | 312W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 500V | 37A | Standard | 120mOhm @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | 4367pF @ 25V |
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