- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM50AM24SCG | MOSFET 2N-CH 500V 150A SP6 | Microchip Technology | SP6 | 1250W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 500V | 150A | Silicon Carbide (SiC) | 28mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | 19600pF @ 25V | |||||||||||||
| APTM20DUM05G | MOSFET 2N-CH 200V 317A SP6 | Microchip Technology | SP6 | 1136W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 200V | 317A | Standard | 6mOhm @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | |||||||||||||
| MSCSM170AM039CT6AG | PM-MOSFET-SIC-SBD-SP3F | Microchip Technology | 2.4kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 523A (Tc) | Silicon Carbide (SiC) | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 1602nC @ 20V | 29700pF @ 1000V | ||||||||||||||
| APT8M100B | MOSFET N-CH 1000V 8A TO-247 | Microchip Technology | TO-247 [B] | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 290W (Tc) | 1000V | 8A (Tc) | 1.8Ohm @ 4A, 10V | 10V | 5V @ 1mA | 60nC @ 10V | 1885pF @ 25V | ±30V | |||||||||||
| LND150N3-G-P014 | MOSFET N-CH 500V 30MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Ta) | 500V | 30mA (Tj) | Depletion Mode | 1000Ohm @ 500µA, 0V | 0V | 10pF @ 25V | ±20V | ||||||||||||
| TP2502N8-G | MOSFET P-CH 20V 0.63A SOT89-3 | Microchip Technology | TO-243AA (SOT-89) | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.6W (Ta) | 20V | 630mA (Tj) | 2Ohm @ 1A, 10V | 5V, 10V | 2.4V @ 1mA | 125pF @ 20V | ±20V | ||||||||||||
| APTM20AM06SG | MOSFET 2N-CH 200V 300A SP6 | Microchip Technology | SP6 | 1250W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 200V | 300A | Standard | 7.2mOhm @ 150A, 10V | 5V @ 6mA | 325nC @ 10V | 18500pF @ 25V | |||||||||||||
| MSCMC120AM04CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 1754W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 388A (Tc) | Silicon Carbide (SiC) | 5.7mOhm @ 300A, 20V | 4V @ 90mA | 966nC @ 20V | 16700pF @ 1000V | |||||||||||||
| VN0104N3-G-P013 | MOSFET N-CH 40V 350MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 40V | 350mA (Tj) | 3Ohm @ 1A, 10V | 5V, 10V | 2.4V @ 1mA | 65pF @ 25V | ±20V | ||||||||||||
| TC2320TG-G | MOSFET N/P-CH 200V 8SOIC | Microchip Technology | 8-SOIC | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 200V | Standard | 7Ohm @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | ||||||||||||||||
| ARF1511 | RF PWR MOSFET 500V 20A DIE | Microchip Technology | Die | 750W | 40.7MHz | 500V | 20A | Die | 4 N-Channel | 15dB | 380V | |||||||||||||||||
| APTC60DHM24T3G | MOSFET 2N-CH 600V 95A SP3 | Microchip Technology | SP3 | 462W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ | ||||||||||||
| TD9944TG-G | MOSFET 2N-CH 240V 8SOIC | Microchip Technology | 8-SOIC | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 240V | Standard | 6Ohm @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | ||||||||||||||||
| ARF461BG | RF MOSFET N-CH 1000V TO247 | Microchip Technology | TO-247 | 150W | 65MHz | 1000V | 25µA | TO-247-3 | N-Channel | 15dB | 50V | |||||||||||||||||
| TN5325N3-G-P002 | MOSFET N-CH 250V 0.215A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | N-Channel | 740mW (Ta) | 250V | 215mA (Ta) | 7Ohm @ 1A, 10V | 4.5V, 10V | 2V @ 1mA | 110pF @ 25V | ±20V |
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