- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VN10KN3-G-P013 | MOSFET N-CH 60V 310MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 310mA (Tj) | 5Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 1mA | 60pF @ 25V | ±30V | ||||||||||||
| MSCSM120HM31CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 395W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel | 1200V (1.2kV) | 89A (Tc) | Silicon Carbide (SiC) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | |||||||||||||
| MSCSM120AM042CD3AG | PM-MOSFET-SIC-SBD~-D3 | Microchip Technology | D3 | 2.031kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 495A (Tc) | Silicon Carbide (SiC) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | |||||||||||||
| APTM50HM38FG | MOSFET 4N-CH 500V 90A SP6 | Microchip Technology | SP6 | 694W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 500V | 90A | Standard | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | |||||||||||||
| DN3135K1-G | MOSFET N-CH 350V 72MA SOT23-3 | Microchip Technology | SOT-23-3 (TO-236) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360mW (Ta) | 350V | 72mA (Tj) | Depletion Mode | 35Ohm @ 150mA, 0V | 0V | 120pF @ 25V | ±20V | ||||||||||||
| VP2450N3-G | MOSFET P-CH 500V 0.1A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 740mW (Ta) | 500V | 100mA (Tj) | 30Ohm @ 100mA, 10V | 4.5V, 10V | 3.5V @ 1mA | 190pF @ 25V | ±20V | ||||||||||||
| APTMC120AM55CT1AG | MOSFET 2N-CH 1200V 55A SP1 | Microchip Technology | SP1 | 250W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 55A (Tc) | Silicon Carbide (SiC) | 49mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | |||||||||||||
| APTC60AM45B1G | MOSFET 3N-CH 600V 49A SP1 | Microchip Technology | SP1 | 250W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 3 N Channel (Phase Leg + Boost Chopper) | 600V | 49A | Standard | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | CoolMOS™ | ||||||||||||
| MSCSM120TAM11CTPAG | PM-MOSFET-SIC-SBD~-SP6P | Microchip Technology | SP6-P | 1.042kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 251A (Tc) | Silicon Carbide (SiC) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | |||||||||||||
| LND150N3-G | MOSFET N-CH 500V 30MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Ta) | 500V | 30mA (Tj) | Depletion Mode | 1000Ohm @ 500µA, 0V | 0V | 10pF @ 25V | ±20V | ||||||||||||
| TN0610N3-G-P013 | MOSFET N-CH 100V 500MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 100V | 500mA (Tj) | 1.5Ohm @ 750mA, 10V | 3V, 10V | 2V @ 1mA | 150pF @ 25V | ±20V | ||||||||||||
| 2N7008-G | MOSFET N-CH 60V 0.23A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 230mA (Tj) | 7.5Ohm @ 500mA, 10V | 5V, 10V | 2.5V @ 250µA | 50pF @ 25V | ±30V | ||||||||||||
| VP0550N3-G | MOSFET P-CH 500V 0.054A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1W (Tc) | 500V | 54mA (Tj) | 125Ohm @ 10mA, 10V | 5V, 10V | 4.5V @ 1mA | 70pF @ 25V | ±20V | ||||||||||||
| DN3525N8-G | MOSFET N-CH 250V 360MA SOT89-3 | Microchip Technology | TO-243AA (SOT-89) | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.6W (Ta) | 250V | 360mA (Tj) | Depletion Mode | 6Ohm @ 200mA, 0V | 0V | 350pF @ 25V | ±20V | ||||||||||||
| APTM100H45SCTG | MOSFET 4N-CH 1000V 18A SP4 | Microchip Technology | SP4 | 357W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 1000V (1kV) | 18A | Standard | 540mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | POWER MOS 7® |
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