- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM10DSKM19T3G | MOSFET 2N-CH 100V 70A SP3 | Microchip Technology | SP3 | 208W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 100V | 70A | Standard | 21mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | |||||||||||||
| APTM20AM10STG | MOSFET 2N-CH 200V 175A SP4 | Microchip Technology | SP4 | 694W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 200V | 175A | Standard | 12mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | |||||||||||||
| VN0106N3-G-P003 | MOSFET N-CH 60V 350MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 350mA (Tj) | 3Ohm @ 1A, 10V | 5V, 10V | 2.4V @ 1mA | 65pF @ 25V | ±20V | ||||||||||||
| VN0606L-G-P003 | MOSFET N-CH 60V 330MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 60V | 330mA (Tj) | 3Ohm @ 1A, 10V | 10V | 2V @ 1mA | 50pF @ 25V | ±30V | ||||||||||||
| MSC017SMA120B | MOSFET SIC 1200V 17 MOHM TO-247 | Microchip Technology | ||||||||||||||||||||||||||
| TP0606N3-G-P003 | MOSFET P-CH 60V 320MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1W (Tc) | 60V | 320mA (Tj) | 3.5Ohm @ 750mA, 10V | 5V, 10V | 2.4V @ 1mA | 150pF @ 25V | ±20V | ||||||||||||
| TN0604N3-G-P013 | MOSFET N-CH 40V 700MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Ta) | 40V | 700mA (Tj) | 750mOhm @ 1.5A, 10V | 5V, 10V | 1.6V @ 1mA | 190pF @ 20V | ±20V | ||||||||||||
| APTM20HM20FTG | MOSFET 4N-CH 200V 89A SP4 | Microchip Technology | SP4 | 357W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 200V | 89A | Standard | 24mOhm @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | 6850pF @ 25V | |||||||||||||
| APTM50AM19FG | MOSFET 2N-CH 500V 163A SP6 | Microchip Technology | SP6 | 1136W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 500V | 163A | Standard | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | |||||||||||||
| VN2460N3-G | MOSFET N-CH 600V 0.16A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Ta) | 600V | 160mA (Tj) | 20Ohm @ 100mA, 10V | 4.5V, 10V | 4V @ 2mA | 150pF @ 25V | ±20V | ||||||||||||
| DN3545N3-G | MOSFET N-CH 450V 0.136A TO92-3 | Microchip Technology | TO-92 (TO-226) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 740mW (Ta) | 450V | 136mA | Depletion Mode | 20Ohm @ 150mA, 0V | 0V | 360pF @ 25V | ±20V | ||||||||||||
| APTC60DDAM24T3G | MOSFET 2N-CH 600V 95A SP3 | Microchip Technology | SP3 | 462W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 2 N Channel (Dual Buck Chopper) | 600V | 95A | Super Junction | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | CoolMOS™ | ||||||||||||
| VN0104N3-G | MOSFET N-CH 40V 350MA TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 40V | 350mA (Tj) | 3Ohm @ 1A, 10V | 5V, 10V | 2.4V @ 1mA | 65pF @ 25V | ±20V | ||||||||||||
| DN2450K4-G | MOSFET N-CH 500V 350MA 3DPAK | Microchip Technology | TO-252, (D-Pak) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 500V | 350mA (Tj) | Depletion Mode | 10Ohm @ 300mA, 0V | 0V | 200pF @ 25V | ±20V | ||||||||||||
| DN2535N3-G-P003 | MOSFET N-CH 350V 0.12A TO92-3 | Microchip Technology | TO-92 (TO-226) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 350V | 120mA (Tj) | Depletion Mode | 25Ohm @ 120mA, 0V | 0V | 300pF @ 25V | ±20V |
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