- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT20M38SVRG | MOSFET N-CH 200V 67A D3PAK | Microchip Technology | D3 [S] | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 370W (Tc) | 200V | 67A (Tc) | 38mOhm @ 500mA, 10V | 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | ±30V | POWER MOS V® | ||||||||||
| APTM100A18FTG | MOSFET 2N-CH 1000V 43A SP4 | Microchip Technology | SP4 | 780W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1000V (1kV) | 43A | Standard | 210mOhm @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | 10400pF @ 25V | |||||||||||||
| APTMC60TLM55CT3AG | MOSFET 4N-CH 1200V 55A SP3F | Microchip Technology | SP3 | 250W | Chassis Mount | SP3 | -40°C ~ 150°C (TJ) | 4 N-Channel (Three Level Inverter) | 1200V (1.2kV) | 48A (Tc) | Silicon Carbide (SiC) | 49mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | |||||||||||||
| APTC60AM35SCTG | MOSFET 2N-CH 600V 72A SP4 | Microchip Technology | SP4 | 416W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 600V | 72A | Standard | 35mOhm @ 36A, 10V | 3.9V @ 2mA | 518nC @ 10V | 14000pF @ 25V | |||||||||||||
| MIC94030YM4-TR | MOSFET P-CH 16V 1A SOT-143 | Microchip Technology | SOT-143 | Surface Mount | TO-253-4, TO-253AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 568mW (Ta) | 16V | 1A (Ta) | 450mOhm @ 100mA, 10V | 2.7V, 10V | 1.4V @ 250µA | 100pF @ 12V | 16V | TinyFET® | |||||||||||
| VN1206L-G | MOSFET N-CH 120V 0.23A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 120V | 230mA (Tj) | 6Ohm @ 500mA, 10V | 2.5V, 10V | 2V @ 1mA | 125pF @ 25V | ±30V | ||||||||||||
| APTC60TDUM35PG | MOSFET 6N-CH 600V 72A SP6-P | Microchip Technology | SP6-P | 416W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 600V | 72A | Standard | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | |||||||||||||
| APTC60AM45BC1G | MOSFET 3N-CH 600V 49A SP1 | Microchip Technology | SP1 | 250W | Chassis Mount | SP1 | -40°C ~ 150°C (TJ) | 3 N Channel (Phase Leg + Boost Chopper) | 600V | 49A | Standard | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | CoolMOS™ | ||||||||||||
| DN3135N8-G | MOSFET N-CH 350V 0.135A SOT89-3 | Microchip Technology | TO-243AA (SOT-89) | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.3W (Ta) | 350V | 135mA (Tj) | Depletion Mode | 35Ohm @ 150mA, 0V | 0V | 120pF @ 25V | ±20V | ||||||||||||
| MSCSM120TAM16CTPAG | PM-MOSFET-SIC-SBD~-SP6P | Microchip Technology | SP6-P | 728W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 171A (Tc) | Silicon Carbide (SiC) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | |||||||||||||
| APTM100A13SCG | MOSFET 2N-CH 1000V 65A SP6 | Microchip Technology | SP6 | 1250W | Chassis Mount | SP6 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 1000V (1kV) | 65A | Standard | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | |||||||||||||
| MSCSM70DUM10T3AG | PM-MOSFET-SIC-SP3F | Microchip Technology | SP3F | 690W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N-Channel (Dual) Common Source | 700V | 241A (Tc) | Silicon Carbide (SiC) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | |||||||||||||
| APTM20HM16FTG | MOSFET 4N-CH 200V 104A SP4 | Microchip Technology | SP4 | 390W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 4 N-Channel (Half Bridge) | 200V | 104A | Standard | 19mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | |||||||||||||
| VRF150 | RF MOSFET N-CHANNEL 50V M174 | Microchip Technology | M174 | 150W | 150MHz | 170V | 1mA | M174 | N-Channel | 11dB | 50V | 250mA | ||||||||||||||||
| MSCSM70HM19CT3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 365W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel | 700V | 124A (Tc) | Silicon Carbide (SiC) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V |
- 10
- 15
- 50
- 100