Найдено: 8
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRFP264 MOSFET N-CH 250V 38A TO247 IXYS TO-247AD Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 280W (Tc) 250V 38A (Tc) 75mOhm @ 23A, 10V 10V 4V @ 250µA 210nC @ 10V 4800pF @ 25V ±20V
IXFH100N25P MOSFET N-CH 250V 100A TO-247 IXYS TO-247AD Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 600W (Tc) 250V 100A (Tc) 27mOhm @ 50A, 10V 10V 5V @ 4mA 185nC @ 10V 6300pF @ 25V ±20V PolarHT™ HiPerFET™
IXTJ36N20 MOSFET N-CH 200V 36A TO-247AD IXYS TO-247AD Through Hole TO-3P-3 Full Pack MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 300W (Tc) 200V 36A (Tc) 70mOhm @ 18A, 10V 10V 4V @ 4mA 140nC @ 10V 2970pF @ 25V ±20V HiPerFET™
IRFP470 MOSFET N-CH 500V 24A TO-247AD IXYS TO-247AD Through Hole TO-3P-3 Full Pack MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 300W (Tc) 500V 24A (Tc) 230mOhm @ 12A, 10V 10V 4V @ 250µA 190nC @ 10V 4200pF @ 25V ±20V MegaMOS™
IRFP460 MOSFET N-CH 500V 20A TO-247AD IXYS TO-247AD Through Hole TO-3P-3 Full Pack MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 260W (Tc) 500V 20A (Tc) 270mOhm @ 12A, 10V 10V 4V @ 250µA 210nC @ 10V 4200pF @ 25V ±20V MegaMOS™
IRFP250 MOSFET N-CH 200V 30A TO-247AD IXYS TO-247AD Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 190W (Tc) 200V 30A (Tc) 85mOhm @ 18A, 10V 10V 4V @ 250µA 140nC @ 10V 2970pF @ 25V ±20V
IRFP260 MOSFET N-CH 200V 46A TO247 IXYS TO-247AD Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 280W (Tc) 200V 46A (Tc) 55mOhm @ 28A, 10V 10V 4V @ 250µA 230nC @ 10V 3900pF @ 25V ±20V
IRFP450 MOSFET N-CH 500V 14A TO-247AD IXYS TO-247AD Through Hole TO-3P-3 Full Pack MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 190W (Tc) 500V 14A (Tc) 400mOhm @ 8.4A, 10V 10V 4V @ 250µA 150nC @ 10V 2800pF @ 25V ±20V