Найдено: 6
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXFP60N25X3 MOSFET N-CH 250V 60A TO220AB IXYS TO-220AB (IXFP) Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 320W (Tc) 250V 60A (Tc) 23mOhm @ 30A, 10V 10V 4.5V @ 1.5mA 50nC @ 10V 3610pF @ 25V ±20V HiPerFET™
IXFP60N25X3M MOSFET N-CH 250V 60A TO220AB IXYS TO-220AB (IXFP) Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 36W (Tc) 250V 60A (Tc) 23mOhm @ 30A, 10V 10V 4.5V @ 1.5mA 50nC @ 10V 3610pF @ 25V ±20V HiPerFET™
IXFP80N25X3 MOSFET N-CH 250V 80A TO220AB IXYS TO-220AB (IXFP) Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 390W (Tc) 250V 80A (Tc) 16mOhm @ 40A, 10V 10V 4.5V @ 1.5mA 83nC @ 10V 5430pF @ 25V ±20V HiPerFET™
IXFP4N85X MOSFET N-CH 850V 3.5A TO220AB IXYS TO-220AB (IXFP) Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 150W (Tc) 850V 3.5A (Tc) 2.5Ohm @ 2A, 10V 10V 5.5V @ 250µA 7nC @ 10V 247pF @ 25V ±30V HiPerFET™
IXFP14N85X MOSFET N-CH 850V 14A TO220AB IXYS TO-220AB (IXFP) Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 460W (Tc) 850V 14A (Tc) 550mOhm @ 500mA, 10V 10V 5.5V @ 1mA 30nC @ 10V 1043pF @ 25V ±30V HiPerFET™
IXFP8N85X MOSFET N-CH 850V 8A TO220AB IXYS TO-220AB (IXFP) Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 200W (Tc) 850V 8A (Tc) 850mOhm @ 4A, 10V 10V 5.5V @ 250µA 17nC @ 10V 654pF @ 25V ±30V HiPerFET™