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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
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Package / Case
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Технология
|
Рабочая температура
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Тип канала
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Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
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Непрерывный ток стока (Id) @ 25°C
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXFB210N30P3 | MOSFET N-CH 300V 210A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1890W (Tc) | 300V | 210A (Tc) | 14.5mOhm @ 105A, 10V | 10V | 5V @ 8mA | 268nC @ 10V | 16200pF @ 25V | ±20V | HiPerFET™, Polar3™ |
IXFB82N60P | MOSFET N-CH 600V 82A PLUS 264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 600V | 82A (Tc) | 75mOhm @ 41A, 10V | 10V | 5V @ 8mA | 240nC @ 10V | 23000pF @ 25V | ±30V | HiPerFET™, PolarHT™ |
IXFB82N60Q3 | MOSFET N-CH 600V 82A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 600V | 82A (Tc) | 75mOhm @ 41A, 10V | 10V | 6.5V @ 8mA | 275nC @ 10V | 13500pF @ 25V | ±30V | HiPerFET™ |
IXFB100N50P | MOSFET N-CH 500V 100A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | N-Channel | 1890W (Tc) | 500V | 100A (Tc) | 49mOhm @ 50A, 10V | 10V | 5V @ 8mA | 240nC @ 10V | 20000pF @ 25V | ±30V | HiPerFET™, PolarHT™ | |
IXFB60N80P | MOSFET N-CH 800V 60A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 800V | 60A (Tc) | 140mOhm @ 30A, 10V | 10V | 5V @ 8mA | 250nC @ 10V | 18000pF @ 25V | ±30V | HiPerFET™, PolarHT™ |
IXFB44N100P | MOSFET N-CH 1000V 44A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 1000V | 44A (Tc) | 220mOhm @ 22A, 10V | 10V | 6.5V @ 1mA | 305nC @ 10V | 19000pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
IXFB62N80Q3 | MOSFET N-CH 800V 62A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 800V | 62A (Tc) | 140mOhm @ 31A, 10V | 10V | 6.5V @ 8mA | 270nC @ 10V | 13600pF @ 25V | ±30V | HiPerFET™ |
IXFB70N100X | MOSFET 1KV 70A ULTRA JCT PLUS247 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1785W (Tc) | 1000V | 70A (Tc) | 89mOhm @ 35A, 10V | 10V | 6V @ 8mA | 350nC @ 10V | 9160pF @ 25V | ±30V | HiPerFET™ |
IXFB132N50P3 | MOSFET N-CH 500V 132A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1890W (Tc) | 500V | 132A (Tc) | 39mOhm @ 66A, 10V | 10V | 5V @ 8mA | 250nC @ 10V | 18600pF @ 25V | ±30V | HiPerFET™, Polar3™ |
IXFB150N65X2 | MOSFET N-CH 650V 150A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 650V | 150A (Tc) | 17mOhm @ 75A, 10V | 10V | 5.5V @ 8mA | 430nC @ 10V | 20400pF @ 25V | ±30V | HiPerFET™ |
IXFB100N50Q3 | MOSFET N-CH 500V 100A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 500V | 100A (Tc) | 49mOhm @ 50A, 10V | 10V | 6.5V @ 8mA | 255nC @ 10V | 13800pF @ 25V | ±30V | HiPerFET™ |
IXFB44N100Q3 | MOSFET N-CH 1000V 44A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 1000V | 44A (Tc) | 220mOhm @ 22A, 10V | 10V | 6.5V @ 8mA | 264nC @ 10V | 13600pF @ 25V | ±30V | HiPerFET™ |
IXFB38N100Q2 | MOSFET N-CH 1000V 38A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 1000V | 38A (Tc) | 250mOhm @ 19A, 10V | 10V | 5.5V @ 8mA | 250nC @ 10V | 13500pF @ 25V | ±30V | HiPerFET™ |
IXFB90N85X | 850V/90A ULT JUNC X-C HIPERFET P | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1785W (Tc) | 850V | 90A (Tc) | 41mOhm @ 500mA, 10V | 10V | 5.5V @ 8mA | 340nC @ 10V | 13300pF @ 25V | ±30V | HiPerFET™ |
IXFB72N55Q2 | MOSFET N-CH 550V 72A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 550V | 72A (Tc) | 72mOhm @ 500mA, 10V | 10V | 5V @ 8mA | 258nC @ 10V | 10500pF @ 25V | ±30V | HiPerFET™ |
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