Найдено: 29
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXFB210N30P3 MOSFET N-CH 300V 210A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1890W (Tc) 300V 210A (Tc) 14.5mOhm @ 105A, 10V 10V 5V @ 8mA 268nC @ 10V 16200pF @ 25V ±20V HiPerFET™, Polar3™
IXFB82N60P MOSFET N-CH 600V 82A PLUS 264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1250W (Tc) 600V 82A (Tc) 75mOhm @ 41A, 10V 10V 5V @ 8mA 240nC @ 10V 23000pF @ 25V ±30V HiPerFET™, PolarHT™
IXFB82N60Q3 MOSFET N-CH 600V 82A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1560W (Tc) 600V 82A (Tc) 75mOhm @ 41A, 10V 10V 6.5V @ 8mA 275nC @ 10V 13500pF @ 25V ±30V HiPerFET™
IXFB100N50P MOSFET N-CH 500V 100A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) N-Channel 1890W (Tc) 500V 100A (Tc) 49mOhm @ 50A, 10V 10V 5V @ 8mA 240nC @ 10V 20000pF @ 25V ±30V HiPerFET™, PolarHT™
IXFB60N80P MOSFET N-CH 800V 60A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1250W (Tc) 800V 60A (Tc) 140mOhm @ 30A, 10V 10V 5V @ 8mA 250nC @ 10V 18000pF @ 25V ±30V HiPerFET™, PolarHT™
IXFB44N100P MOSFET N-CH 1000V 44A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1250W (Tc) 1000V 44A (Tc) 220mOhm @ 22A, 10V 10V 6.5V @ 1mA 305nC @ 10V 19000pF @ 25V ±30V HiPerFET™, PolarP2™
IXFB62N80Q3 MOSFET N-CH 800V 62A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1560W (Tc) 800V 62A (Tc) 140mOhm @ 31A, 10V 10V 6.5V @ 8mA 270nC @ 10V 13600pF @ 25V ±30V HiPerFET™
IXFB70N100X MOSFET 1KV 70A ULTRA JCT PLUS247 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1785W (Tc) 1000V 70A (Tc) 89mOhm @ 35A, 10V 10V 6V @ 8mA 350nC @ 10V 9160pF @ 25V ±30V HiPerFET™
IXFB132N50P3 MOSFET N-CH 500V 132A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1890W (Tc) 500V 132A (Tc) 39mOhm @ 66A, 10V 10V 5V @ 8mA 250nC @ 10V 18600pF @ 25V ±30V HiPerFET™, Polar3™
IXFB150N65X2 MOSFET N-CH 650V 150A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1560W (Tc) 650V 150A (Tc) 17mOhm @ 75A, 10V 10V 5.5V @ 8mA 430nC @ 10V 20400pF @ 25V ±30V HiPerFET™
IXFB100N50Q3 MOSFET N-CH 500V 100A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1560W (Tc) 500V 100A (Tc) 49mOhm @ 50A, 10V 10V 6.5V @ 8mA 255nC @ 10V 13800pF @ 25V ±30V HiPerFET™
IXFB44N100Q3 MOSFET N-CH 1000V 44A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1560W (Tc) 1000V 44A (Tc) 220mOhm @ 22A, 10V 10V 6.5V @ 8mA 264nC @ 10V 13600pF @ 25V ±30V HiPerFET™
IXFB38N100Q2 MOSFET N-CH 1000V 38A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 890W (Tc) 1000V 38A (Tc) 250mOhm @ 19A, 10V 10V 5.5V @ 8mA 250nC @ 10V 13500pF @ 25V ±30V HiPerFET™
IXFB90N85X 850V/90A ULT JUNC X-C HIPERFET P IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1785W (Tc) 850V 90A (Tc) 41mOhm @ 500mA, 10V 10V 5.5V @ 8mA 340nC @ 10V 13300pF @ 25V ±30V HiPerFET™
IXFB72N55Q2 MOSFET N-CH 550V 72A PLUS264 IXYS PLUS264™ Through Hole TO-264-3, TO-264AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 890W (Tc) 550V 72A (Tc) 72mOhm @ 500mA, 10V 10V 5V @ 8mA 258nC @ 10V 10500pF @ 25V ±30V HiPerFET™