-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTB30N100L | MOSFET N-CH 1000V 30A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800W (Tc) | 1000V | 30A (Tc) | 450mOhm @ 500mA, 20V | 20V | 5V @ 250µA | 545nC @ 20V | 13200pF @ 25V | ±30V | |
| IXFB80N50Q2 | MOSFET N-CH 500V 80A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 500V | 80A (Tc) | 60mOhm @ 500mA, 10V | 10V | 5.5V @ 8mA | 250nC @ 10V | 15000pF @ 25V | ±30V | HiPerFET™ |
| IXFB30N120P | MOSFET N-CH 1200V 30A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 1200V | 30A (Tc) | 350mOhm @ 500mA, 10V | 10V | 6.5V @ 1mA | 310nC @ 10V | 22500pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
| IXFB110N60P3 | MOSFET N-CH 600V 110A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1890W (Tc) | 600V | 110A (Tc) | 56mOhm @ 55A, 10V | 10V | 5V @ 8mA | 245nC @ 10V | 18000pF @ 25V | ±30V | HiPerFET™, Polar3™ |
| IXFB300N10P | MOSFET N-CH 100V 300A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1500W (Tc) | 100V | 300A (Tc) | 5.5mOhm @ 50A, 10V | 10V | 5V @ 8mA | 279nC @ 10V | 23000pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
| IXFB40N110P | MOSFET N-CH 1100V 40A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 1100V | 40A (Tc) | 260mOhm @ 20A, 10V | 10V | 6.5V @ 1mA | 310nC @ 10V | 19000pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
| IXFB52N90P | MOSFET N-CH TO-264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 900V | 52A (Tc) | 160mOhm @ 26A, 10V | 10V | 6.5V @ 1mA | 308nC @ 10V | 19000pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
| IXFB40N110Q3 | MOSFET N-CH 1100V 40A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1560W (Tc) | 1100V | 40A (Tc) | 260mOhm @ 20A, 10V | 10V | 6.5V @ 8mA | 300nC @ 10V | 14000pF @ 25V | ±30V | HiPerFET™ |
| IXFB170N30P | MOSFET N-CH TO-264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 300V | 170A (Tc) | 18mOhm @ 85A, 10V | 10V | 4.5V @ 1mA | 258nC @ 10V | 20000pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
| IXFB70N60Q2 | MOSFET N-CH 600V 70A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 600V | 70A (Tc) | 88mOhm @ 35A, 10V | 10V | 5.5V @ 8mA | 265nC @ 10V | 12000pF @ 25V | ±30V | HiPerFET™ |
| IXFB120N50P2 | MOSFET N-CH 500V 120A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1890W (Tc) | 500V | 120A (Tc) | 43mOhm @ 500mA, 10V | 10V | 5V @ 8mA | 300nC @ 10V | 19000pF @ 25V | ±30V | HiPerFET™, PolarHV™ |
| IXFB50N80Q2 | MOSFET N-CH 800V 50A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1135W (Tc) | 800V | 50A (Tc) | 160mOhm @ 500mA, 10V | 10V | 5.5V @ 8mA | 260nC @ 10V | 7200pF @ 25V | ±30V | HiPerFET™ |
| IXFB210N20P | MOSFET N-CH 200V 210A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1500W (Tc) | 200V | 210A (Tc) | 10.5mOhm @ 105A, 10V | 10V | 4.5V @ 8mA | 255nC @ 10V | 18600pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
| IXTB62N50L | MOSFET N-CH 500V 62A PLUS264 | IXYS | PLUS264™ | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 800W (Tc) | 500V | 62A (Tc) | 100mOhm @ 31A, 20V | 20V | 5.5V @ 250µA | 550nC @ 20V | 11500pF @ 25V | ±30V |
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