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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
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Package / Case
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Технология
|
Рабочая температура
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Тип канала
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Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
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Непрерывный ток стока (Id) @ 25°C
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXTX3N250L | MOSFET DISCRETE TO-247P | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 417W (Tc) | 2500V | 3A (Tc) | 10Ohm @ 1.5A, 10V | 10V | 5V @ 1mA | 230nC @ 10V | 5400pF @ 25V | ±20V | |
IXFX100N25 | MOSFET N-CH 250V 100A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 560W (Tc) | 250V | 100A (Tc) | 27mOhm @ 50A, 10V | 10V | 4V @ 8mA | 300nC @ 10V | 9100pF @ 25V | ±20V | HiPerFET™ |
IXTX90N25L2 | MOSFET N-CH 250V 90A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 250V | 90A (Tc) | 33mOhm @ 45A, 10V | 10V | 4.5V @ 3mA | 640nC @ 10V | 23000pF @ 25V | ±20V | Linear L2™ |
IXFX80N50Q3 | MOSFET N-CH 500V 80A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 500V | 80A (Tc) | 65mOhm @ 40A, 10V | 10V | 6.5V @ 8mA | 200nC @ 10V | 10000pF @ 25V | ±30V | HiPerFET™ |
IXFX210N17T | MOSFET N-CH 170V 210A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1150W (Tc) | 170V | 210A (Tc) | 7.5mOhm @ 60A, 10V | 10V | 5V @ 4mA | 285nC @ 10V | 18800pF @ 25V | ±20V | GigaMOS™ |
IXFX180N15P | MOSFET N-CH 150V 180A PLUS 247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 830W (Tc) | 150V | 180A (Tc) | 11mOhm @ 90A, 10V | 10V | 5V @ 4mA | 240nC @ 10V | 7000pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
IXTX210P10T | MOSFET P-CH 100V 210A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1040W (Tc) | 100V | 210A (Tc) | 7.5mOhm @ 105A, 10V | 10V | 4.5V @ 250µA | 740nC @ 10V | 69500pF @ 25V | ±15V | TrenchP™ |
IXTX22N100L | MOSFET N-CH 1000V 22A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 700W (Tc) | 1000V | 22A (Tc) | 600mOhm @ 11A, 20V | 10V | 5V @ 250µA | 270nC @ 15V | 7050pF @ 25V | ±30V | |
IXTX200N10L2 | MOSFET N-CH 100V 200A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1040W (Tc) | 100V | 200A (Tc) | 11mOhm @ 100A, 10V | 10V | 4.5V @ 3mA | 540nC @ 10V | 23000pF @ 25V | ±20V | Linear L2™ |
IXTX46N50L | MOSFET N-CH 500V 46A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 700W (Tc) | 500V | 46A (Tc) | 160mOhm @ 500mA, 20V | 20V | 6V @ 250µA | 260nC @ 15V | 7000pF @ 25V | ±30V | |
IXFX21N100Q | MOSFET N-CH 1000V 21A PLUS 247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 1000V | 21A (Tc) | 500mOhm @ 10.5A, 10V | 10V | 5.5V @ 4mA | 170nC @ 10V | 6900pF @ 25V | ±20V | HiPerFET™ |
IXFX73N30Q | MOSFET N-CH 300V 73A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 300V | 73A (Tc) | 45mOhm @ 500mA, 10V | 10V | 4V @ 4mA | 195nC @ 10V | 5400pF @ 25V | ±30V | HiPerFET™ |
IXFX12N90Q | MOSFET N-CH 900V 12A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 900V | 12A (Tc) | 900mOhm @ 6A, 10V | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | HiPerFET™ |
IXFX27N80Q | MOSFET N-CH 800V 27A PLUS 247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 800V | 27A (Tc) | 320mOhm @ 500mA, 10V | 10V | 4.5V @ 4mA | 170nC @ 10V | 7600pF @ 25V | ±20V | HiPerFET™ |
IXFX24N100Q3 | MOSFET N-CH 1000V 24A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1000W (Tc) | 1000V | 24A (Tc) | 440mOhm @ 12A, 10V | 10V | 6.5V @ 4mA | 140nC @ 10V | 7200pF @ 25V | ±30V | HiPerFET™ |
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