-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFX20N120P | MOSFET N-CH 1200V 20A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 780W (Tc) | 1200V | 20A (Tc) | 570mOhm @ 10A, 10V | 10V | 6.5V @ 1mA | 193nC @ 10V | 11100pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
| IXTX120P20T | MOSFET P-CH 200V 120A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | P-Channel | 200V | 120A (Tc) | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740nC @ 10V | 73000pF @ 25V | TrenchP™ | ||||
| IXFX150N30P3 | MOSFET N-CH 300V 150A TO-247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1300W (Tc) | 300V | 150A (Tc) | 19mOhm @ 75A, 10V | 10V | 5V @ 8mA | 197nC @ 10V | 12100pF @ 25V | ±20V | HiPerFET™, Polar3™ |
| IXFX80N60P3 | MOSFET N-CH 600V 80A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1300W (Tc) | 600V | 80A (Tc) | 70mOhm @ 500mA, 10V | 10V | 5V @ 8mA | 190nC @ 10V | 13100pF @ 25V | ±30V | HiPerFET™, Polar3™ |
| IXFX26N100P | MOSFET N-CH 1000V 26A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 780W (Tc) | 1000V | 26A (Tc) | 390mOhm @ 13A, 10V | 10V | 6.5V @ 1mA | 197nC @ 10V | 11900pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
| IXFX90N60X | MOSFET N-CH 600V 90A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1100W (Tc) | 600V | 90A (Tc) | 38mOhm @ 45A, 10V | 10V | 4.5V @ 8mA | 210nC @ 10V | 8500pF @ 25V | ±30V | HiPerFET™ |
| IXFX88N20Q | MOSFET N-CH 200V 88A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 200V | 88A (Tc) | 30mOhm @ 44A, 10V | 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | ±30V | HiPerFET™ |
| IXFX26N120P | MOSFET N-CH 1200V 26A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 1200V | 26A (Tc) | 500mOhm @ 13A, 10V | 10V | 6.5V @ 1mA | 225nC @ 10V | 16000pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
| IXFX14N100 | MOSFET N-CH 1000V 14A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 360W (Tc) | 1000V | 14A (Tc) | 750mOhm @ 500mA, 10V | 10V | 4.5V @ 4mA | 220nC @ 10V | 4500pF @ 25V | ±20V | HiPerFET™ |
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