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- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
Наименование | Описание | Производитель
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Тип корпуса
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Вид монтажа
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Package / Case
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Технология
|
Рабочая температура
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Тип канала
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Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
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Непрерывный ток стока (Id) @ 25°C
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Rds On (Max) @ Id, Vgs
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Drive Voltage (Max Rds On, Min Rds On)
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Пороговое напряжение затвора (Max) @ Id
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Заряд затвора (Qg) (Max) @ Vgs
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Входная емкость (Ciss) (Max) @ Vds
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Напряжение затвора (макс)
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Серия
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IXFX55N50F | MOSFET N-CH 500V 55A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 560W (Tc) | 500V | 55A (Tc) | 85mOhm @ 27.5A, 10V | 10V | 5.5V @ 8mA | 195nC @ 10V | 6700pF @ 25V | ±20V | HiPerRF™ |
IXFX32N80Q3 | MOSFET N-CH 800V 32A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1000W (Tc) | 800V | 32A (Tc) | 270mOhm @ 16A, 10V | 10V | 6.5V @ 4mA | 140nC @ 10V | 6940pF @ 25V | ±30V | HiPerFET™ |
IXFX60N55Q2 | MOSFET N-CH 550V 60A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 735W (Tc) | 550V | 60A (Tc) | 88mOhm @ 30A, 10V | 10V | 4.5V @ 8mA | 200nC @ 10V | 6900pF @ 25V | ±30V | HiPerFET™ |
IXTX60N50L2 | MOSFET N-CH 500V 60A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 500V | 60A (Tc) | 100mOhm @ 30A, 10V | 10V | 4.5V @ 250µA | 610nC @ 10V | 24000pF @ 25V | ±30V | Linear L2™ |
IXFX120N25 | MOSFET N-CH 250V 120A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 560W (Tc) | 250V | 120A (Tc) | 22mOhm @ 500mA, 10V | 10V | 4V @ 8mA | 400nC @ 10V | 9400pF @ 25V | ±20V | HiPerFET™ |
IXFX200N10P | MOSFET N-CH 100V 200A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 830W (Tc) | 100V | 200A (Tc) | 7.5mOhm @ 100A, 10V | 10V | 5V @ 8mA | 235nC @ 10V | 7600pF @ 25V | ±20V | HiPerFET™, PolarP2™ |
IXFX32N50Q | MOSFET N-CH 500V 32A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 416W (Tc) | 500V | 32A (Tc) | 160mOhm @ 16A, 10V | 10V | 4.5V @ 4mA | 150nC @ 10V | 3950pF @ 25V | ±20V | HiPerFET™ |
IXFX320N17T2 | MOSFET N-CH 170V 320A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1670W (Tc) | 170V | 320A (Tc) | 5.2mOhm @ 60A, 10V | 10V | 5V @ 8mA | 640nC @ 10V | 45000pF @ 25V | ±20V | GigaMOS™ |
IXFX40N90P | MOSFET N-CH PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 960W (Tc) | 900V | 40A (Tc) | 230mOhm @ 20A, 10V | 10V | 6.5V @ 1mA | 230nC @ 10V | 14000pF @ 25V | ±30V | HiPerFET™, PolarP2™ |
IXTX20N150 | MOSFET N-CH 1500V 20A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 1500V | 20A (Tc) | 1Ohm @ 10A, 10V | 10V | 4.5V @ 1mA | 215nC @ 10V | 7800pF @ 25V | ±30V | |
IXFX44N50Q | MOSFET N-CH 500V 44A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 500V | 44A (Tc) | 120mOhm @ 22A, 10V | 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | ±20V | HiPerFET™ |
IXFX20N120 | MOSFET N-CH 1200V 20A ISOPLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 780W (Tc) | 1200V | 20A (Tc) | 750mOhm @ 500mA, 10V | 10V | 4.5V @ 8mA | 160nC @ 10V | 7400pF @ 25V | ±30V | HiPerFET™ |
IXFX44N80Q3 | MOSFET N-CH 800V 44A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 800V | 44A (Tc) | 190mOhm @ 22A, 10V | 10V | 6.5V @ 8mA | 185nC @ 10V | 9840pF @ 25V | ±30V | HiPerFET™ |
IXFX90N20Q | MOSFET N-CH 200V 90A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500W (Tc) | 200V | 90A (Tc) | 22mOhm @ 45A, 10V | 10V | 4V @ 4mA | 190nC @ 10V | 6800pF @ 25V | ±20V | HiPerFET™ |
IXFX25N90 | MOSFET N-CH 900V 25A PLUS247 | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 560W (Tc) | 900V | 25A (Tc) | 330mOhm @ 500mA, 10V | 10V | 5V @ 8mA | 240nC @ 10V | 10800pF @ 25V | ±20V | HiPerFET™ |
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