Найдено: 114
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IXFX55N50F MOSFET N-CH 500V 55A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 560W (Tc) 500V 55A (Tc) 85mOhm @ 27.5A, 10V 10V 5.5V @ 8mA 195nC @ 10V 6700pF @ 25V ±20V HiPerRF™
IXFX32N80Q3 MOSFET N-CH 800V 32A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1000W (Tc) 800V 32A (Tc) 270mOhm @ 16A, 10V 10V 6.5V @ 4mA 140nC @ 10V 6940pF @ 25V ±30V HiPerFET™
IXFX60N55Q2 MOSFET N-CH 550V 60A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 735W (Tc) 550V 60A (Tc) 88mOhm @ 30A, 10V 10V 4.5V @ 8mA 200nC @ 10V 6900pF @ 25V ±30V HiPerFET™
IXTX60N50L2 MOSFET N-CH 500V 60A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 960W (Tc) 500V 60A (Tc) 100mOhm @ 30A, 10V 10V 4.5V @ 250µA 610nC @ 10V 24000pF @ 25V ±30V Linear L2™
IXFX120N25 MOSFET N-CH 250V 120A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 560W (Tc) 250V 120A (Tc) 22mOhm @ 500mA, 10V 10V 4V @ 8mA 400nC @ 10V 9400pF @ 25V ±20V HiPerFET™
IXFX200N10P MOSFET N-CH 100V 200A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 830W (Tc) 100V 200A (Tc) 7.5mOhm @ 100A, 10V 10V 5V @ 8mA 235nC @ 10V 7600pF @ 25V ±20V HiPerFET™, PolarP2™
IXFX32N50Q MOSFET N-CH 500V 32A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 416W (Tc) 500V 32A (Tc) 160mOhm @ 16A, 10V 10V 4.5V @ 4mA 150nC @ 10V 3950pF @ 25V ±20V HiPerFET™
IXFX320N17T2 MOSFET N-CH 170V 320A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1670W (Tc) 170V 320A (Tc) 5.2mOhm @ 60A, 10V 10V 5V @ 8mA 640nC @ 10V 45000pF @ 25V ±20V GigaMOS™
IXFX40N90P MOSFET N-CH PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 960W (Tc) 900V 40A (Tc) 230mOhm @ 20A, 10V 10V 6.5V @ 1mA 230nC @ 10V 14000pF @ 25V ±30V HiPerFET™, PolarP2™
IXTX20N150 MOSFET N-CH 1500V 20A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1250W (Tc) 1500V 20A (Tc) 1Ohm @ 10A, 10V 10V 4.5V @ 1mA 215nC @ 10V 7800pF @ 25V ±30V
IXFX44N50Q MOSFET N-CH 500V 44A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 500V 44A (Tc) 120mOhm @ 22A, 10V 10V 4V @ 4mA 190nC @ 10V 7000pF @ 25V ±20V HiPerFET™
IXFX20N120 MOSFET N-CH 1200V 20A ISOPLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 780W (Tc) 1200V 20A (Tc) 750mOhm @ 500mA, 10V 10V 4.5V @ 8mA 160nC @ 10V 7400pF @ 25V ±30V HiPerFET™
IXFX44N80Q3 MOSFET N-CH 800V 44A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1250W (Tc) 800V 44A (Tc) 190mOhm @ 22A, 10V 10V 6.5V @ 8mA 185nC @ 10V 9840pF @ 25V ±30V HiPerFET™
IXFX90N20Q MOSFET N-CH 200V 90A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 200V 90A (Tc) 22mOhm @ 45A, 10V 10V 4V @ 4mA 190nC @ 10V 6800pF @ 25V ±20V HiPerFET™
IXFX25N90 MOSFET N-CH 900V 25A PLUS247 IXYS PLUS247™-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 560W (Tc) 900V 25A (Tc) 330mOhm @ 500mA, 10V 10V 5V @ 8mA 240nC @ 10V 10800pF @ 25V ±20V HiPerFET™