- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7902TRPBF | HEXFET POWER MOSFET | International Rectifier | 8-SO | 1.4W (Ta), 2W (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 6.4A (Ta), 9.7A (Ta) | 22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V, 9.8nC @ 4.5V | 580pF @ 15V, 900pF @ 15V | HEXFET® | |
| IRFAE20 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier | ||||||||||||||
| IRF7807ZPBFPRO | HEXFET N-CHANNEL POWER MOSFET | International Rectifier | ||||||||||||||
| IRF7307PBF | AUTOMOTIVE HEXFET P-CHANNEL | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 5.2A, 4.3A | Logic Level Gate | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | HEXFET® |
| IRFHE4250DTRPBF | HEXFET POWER MOSFET | International Rectifier | 32-PQFN (6x6) | 156W (Tc) | Surface Mount | 32-PowerVFQFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 25V | 86A (Tc), 303A (Tc) | Standard | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V | 2.1V @ 35µA, 2.1V @ 100µA | 20nC @ 4.5V, 53nC @ 4.5V | 1735pF @ 13V, 4765pF @ 13V | HEXFET® |
| IRFH4257DTRPBF | IRFH4257 - HEXFET POWER MOSFET | International Rectifier | Dual PQFN (5x4) | 25W, 28W | Surface Mount | 8-PowerVDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 25V | 25A | Logic Level Gate | 3.4mOhm @ 25A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1321pF @ 13V | HEXFET® |
| AUIRF7379QTR | AUIRF7379Q - 30V-55V DUAL N AND | International Rectifier | 8-SOIC | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 5.8A, 4.3A | Logic Level Gate | 45mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | HEXFET® |
| IRFF9233 | AUTOMOTIVE HEXFET P-CHANNEL | International Rectifier | ||||||||||||||
| IRFAE32 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier | ||||||||||||||
| IRF7304PBF | AUTOMOTIVE HEXFET P-CHANNEL | International Rectifier | 8-SO | 2W (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.3A (Ta) | Logic Level Gate | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | HEXFET® |
| IRF225 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier | ||||||||||||||
| IRF8313TRPBF | IRF8313 - HEXFET POWER MOSFET | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 30V | 9.7A | Logic Level Gate | 15.5mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V | HEXFET® |
| IRF7762TRLPBF | HEXFET N-CHANNEL POWER MOSFET | International Rectifier | ||||||||||||||
| AUIRF9952QTR | AUIRF9952 HEXFET POWER MOSFET | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 3.5A, 2.3A | Logic Level Gate | 100mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | HEXFET® |
| IRF441 | TRANS MOSFET N-CH 450V 8A | International Rectifier |
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