- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Вид монтажа
|
Package / Case
|
Рабочая температура
|
Тип канала
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRF7303QTR | MOSFET 2N-CH 30V 5.3A 8SOIC | International Rectifier | 8-SO | 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 30V | 5.3A | Logic Level Gate | 50mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | HEXFET® |
| IRF3575DTRPBF | IRF3575D - 20V-30V N-CHANNEL | International Rectifier | 32-PQFN (6x6) | Surface Mount | 32-PowerWFQFN | 2 N-Channel (Dual) | 25V | 303A (Tc) | Standard | |||||||
| IRF7311PBF | HEXFET POWER MOSFET | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 6.6A | Logic Level Gate | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | HEXFET® |
| IRFAF40 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier | ||||||||||||||
| IRF120CECC | PFET, 9.2A I(D), 100V, 0.27OHM, | International Rectifier | ||||||||||||||
| IRF9952QPBF | P-CHANNEL POWER MOSFET | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | N and P-Channel | 30V | 3.5A, 2.3A | Logic Level Gate | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | HEXFET® | |
| IRF7314PBF | P-CHANNEL POWER MOSFET | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 5.3A | Logic Level Gate | 58mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | HEXFET® |
| IRFAUIRF540Z | AUTOMOTIVE HEXFET N-CHANNEL POWE | International Rectifier | ||||||||||||||
| IRFAF30 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier | ||||||||||||||
| 94-2402 | IRF530 - 400V HEXFET, N-CHANNEL | International Rectifier | ||||||||||||||
| IRF323 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier | ||||||||||||||
| IRFI4212H-117P | IRFI4212 - 12V-300V N-CHANNEL PO | International Rectifier | TO-220-5 Full-Pak | 18W | Through Hole | TO-220-5 Full Pack | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 100V | 11A | Standard | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | |
| IRF6802SDTRPBF | 25V DUAL CONTROL FET IN S- CAN | International Rectifier | DirectFET™ Isometric SA | 1.7W (Ta), 21W (Tc) | Surface Mount | DirectFET™ Isometric SA | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 25V | 16A (Ta), 57A (Tc) | Standard | 4.2mOhm @ 16A, 10V | 2.1V @ 35µA | 13nC @ 4.5V | 1350pF @ 13V | DirectFET™ |
| IRF7328PBF | IRF7328 - 20V-250V P-CHANNEL POW | International Rectifier | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 8A | Logic Level Gate | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | HEXFET® |
| IRFAF50 | N-CHANNEL HERMETIC MOS HEXFET | International Rectifier |
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