• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 12
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRF6720S2TRPBF MOSFET N-CH 30V 11A DIRECTFET-S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.7W (Ta), 17W (Tc) 30V 11A (Ta), 35A (Tc) 8mOhm @ 11A, 10V 4.5V, 10V 2.35V @ 25µA 12nC @ 4.5V 1140pF @ 15V ±20V HEXFET®
IRF6709S2TRPBF MOSFET N-CH 25V 12A DIRECTFET-S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.8W (Ta), 21W (Tc) 25V 12A (Ta), 39A (Tc) 7.8mOhm @ 12A, 10V 4.5V, 10V 2.35V @ 25µA 12nC @ 4.5V 1010pF @ 13V ±20V HEXFET®
IRF6710S2TRPBF MOSFET N-CH 25V 12A DIRECTFET Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.8W (Ta), 15W (Tc) 25V 12A (Ta), 37A (Tc) 5.9mOhm @ 12A, 10V 4.5V, 10V 2.4V @ 25µA 13nC @ 4.5V 1190pF @ 13V ±20V HEXFET®
IRF6810STR1PBF MOSFET N CH 25V 16A S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) N-Channel 2.1W (Ta), 20W (Tc) 25V 16A (Ta), 50A (Tc) 5.2mOhm @ 16A, 10V 4.5V, 10V 2.1V @ 25µA 11nC @ 4.5V 1038pF @ 13V ±16V HEXFET®
IRF6709S2TR1PBF MOSFET N-CH 25V 12A DIRECTFET-S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.8W (Ta), 21W (Tc) 25V 12A (Ta), 39A (Tc) 7.8mOhm @ 12A, 10V 4.5V, 10V 2.35V @ 25µA 12nC @ 4.5V 1010pF @ 13V ±20V HEXFET®
IRF6810STRPBF MOSFET N CH 25V 16A S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) N-Channel 2.1W (Ta), 20W (Tc) 25V 16A (Ta), 50A (Tc) 5.2mOhm @ 16A, 10V 4.5V, 10V 2.1V @ 25µA 11nC @ 4.5V 1038pF @ 13V ±16V HEXFET®
IRF6708S2TRPBF MOSFET N-CH 30V 13A DIRECTFET-LV Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.5W (Ta), 20W (Tc) 30V 13A (Tc) 8.9mOhm @ 13A, 10V 4.5V, 10V 2.35V @ 25µA 10nC @ 4.5V 1010pF @ 15V ±20V HEXFET®
IRF6710S2TR1PBF MOSFET N-CH 25V 12A DIRECTFET Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.8W (Ta), 15W (Tc) 25V 12A (Ta), 37A (Tc) 5.9mOhm @ 12A, 10V 4.5V, 10V 2.4V @ 25µA 13nC @ 4.5V 1190pF @ 13V ±20V HEXFET®
IRF6708S2TR1PBF MOSFET N-CH 30V 13A DIRECTFET-LV Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.5W (Ta), 20W (Tc) 30V 13A (Tc) 8.9mOhm @ 13A, 10V 4.5V, 10V 2.35V @ 25µA 10nC @ 4.5V 1010pF @ 15V ±20V HEXFET®
IRF6706S2TRPBF MOSFET N-CH 25V DIRECTFET S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.8W (Ta), 26W (Tc) 25V 17A (Ta), 63A (Tc) 3.8mOhm @ 17A, 10V 4.5V, 10V 2.35V @ 25µA 20nC @ 4.5V 1810pF @ 13V ±20V HEXFET®
IRF6720S2TR1PBF MOSFET N-CH 30V 11A DIRECTFET Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.7W (Ta), 17W (Tc) 30V 11A (Ta), 35A (Tc) 8mOhm @ 11A, 10V 4.5V, 10V 2.35V @ 25µA 12nC @ 4.5V 1140pF @ 15V ±20V HEXFET®
IRF6706S2TR1PBF MOSFET N-CH 25V 17A DIRECTFET-S1 Infineon Technologies DIRECTFET S1 Surface Mount DirectFET™ Isometric S1 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 1.8W (Ta), 26W (Tc) 25V 17A (Ta), 63A (Tc) 3.8mOhm @ 17A, 10V 4.5V, 10V 2.35V @ 25µA 20nC @ 4.5V 1810pF @ 13V ±20V HEXFET®
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