-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS4510PBF | MOSFET N-CH 100V 61A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 100V | 61A (Tc) | 13.9mOhm @ 37A, 10V | 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | ±20V | HEXFET® |
| IRF3711STRR | MOSFET N-CH 20V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta), 120W (Tc) | 20V | 110A (Tc) | 6mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | HEXFET® |
| IRLZ44NSTRRPBF | MOSFET N-CH 55V 47A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 110W (Tc) | 55V | 47A (Tc) | 22mOhm @ 25A, 10V | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | HEXFET® |
| AUIRF6215STRL | MOSFET P-CH 150V 13A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 110W (Tc) | 150V | 13A (Tc) | 290mOhm @ 6.6A, 10V | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | HEXFET® |
| IRF3707ZCSPBF | MOSFET N-CH 30V 59A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 30V | 59A (Tc) | 9.5mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | HEXFET® |
| IRF6218SPBF | MOSFET P-CH 150V 27A D2-PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | P-Channel | 250W (Tc) | 150V | 27A (Tc) | 150mOhm @ 16A, 10V | 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | ±20V | HEXFET® | |
| IRF3205STRRPBF | MOSFET N-CH 55V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 55V | 110A (Tc) | 8mOhm @ 62A, 10V | 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | ±20V | HEXFET® |
| IRL8113STRLPBF | MOSFET N-CH 30V 105A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 110W (Tc) | 30V | 105A (Tc) | 6mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | ±20V | HEXFET® |
| IRF1405STRRPBF | MOSFET N-CH 55V 131A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 55V | 131A (Tc) | 5.3mOhm @ 101A, 10V | 10V | 4V @ 250µA | 260nC @ 10V | 5480pF @ 25V | ±20V | HEXFET® |
| IRL3803STRRPBF | MOSFET N-CH 30V 140A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 30V | 140A (Tc) | 6mOhm @ 71A, 10V | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | ±16V | HEXFET® |
| IRLZ44NSTRR | MOSFET N-CH 55V 47A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 110W (Tc) | 55V | 47A (Tc) | 22mOhm @ 25A, 10V | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | HEXFET® |
| IRFS4115TRLPBF | MOSFET N-CH 150V 195A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 150V | 195A (Tc) | 12.1mOhm @ 62A, 10V | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | HEXFET® |
| IRL3302STRR | MOSFET N-CH 20V 39A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 57W (Tc) | 20V | 39A (Tc) | 20mOhm @ 23A, 7V | 4.5V, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | ±10V | HEXFET® |
| IRL1104STRR | MOSFET N-CH 40V 104A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.4W (Ta), 167W (Tc) | 40V | 104A (Tc) | 8mOhm @ 62A, 10V | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | HEXFET® |
| IRF3205STRR | MOSFET N-CH 55V 110A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 55V | 110A (Tc) | 8mOhm @ 62A, 10V | 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | ±20V | HEXFET® |
- 10
- 15
- 50
- 100