-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRF3315STRL | MOSFET N-CH 150V 21A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 94W (Tc) | 150V | 21A (Tc) | 82mOhm @ 12A, 10V | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | HEXFET® |
| IRFZ44VZSPBF | MOSFET N-CH 60V 57A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 92W (Tc) | 60V | 57A (Tc) | 12mOhm @ 34A, 10V | 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | ±20V | HEXFET® |
| AUIRF3315S | MOSFET N-CH 150V 21A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 94W (Tc) | 150V | 21A (Tc) | 82mOhm @ 12A, 10V | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | HEXFET® |
| IRFZ48ZS | MOSFET N-CH 55V 61A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 91W (Tc) | 55V | 61A (Tc) | 11mOhm @ 37A, 10V | 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | ±20V | HEXFET® |
| IRLZ44ZSPBF | MOSFET N-CH 55V 51A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 80W (Tc) | 55V | 51A (Tc) | 13.5mOhm @ 31A, 10V | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | HEXFET® |
| IRF520NSTRRPBF | MOSFET N-CH 100V 9.7A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 48W (Tc) | 100V | 9.7A (Tc) | 200mOhm @ 5.7A, 10V | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | HEXFET® |
| IRF3709SPBF | MOSFET N-CH 30V 90A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta), 120W (Tc) | 30V | 90A (Tc) | 9mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | ±20V | HEXFET® |
| AUIRFS3806 | MOSFET N-CH 60V 43A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 60V | 43A (Tc) | 15.8mOhm @ 25A, 10V | 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | ±20V | HEXFET® |
| IRFS7434TRLPBF | MOSFET N-CH 40V 195A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 294W (Tc) | 40V | 195A (Tc) | 1.6mOhm @ 100A, 10V | 6V, 10V | 3.9V @ 250µA | 324nC @ 10V | 10820pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IRL3715STRL | MOSFET N-CH 20V 54A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 71W (Tc) | 20V | 54A (Tc) | 14mOhm @ 26A, 10V | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | HEXFET® |
| IRF3707ZCSTRRP | MOSFET N-CH 30V 59A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 30V | 59A (Tc) | 9.5mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | HEXFET® |
| IRL3715ZSTRRPBF | MOSFET N-CH 20V 50A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 45W (Tc) | 20V | 50A (Tc) | 11mOhm @ 15A, 10V | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | ±20V | HEXFET® |
| IRL5602S | MOSFET P-CH 20V 24A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 75W (Tc) | 20V | 24A (Tc) | 42mOhm @ 12A, 4.5V | 2.5V, 4.5V | 1V @ 250µA | 44nC @ 4.5V | 1460pF @ 15V | ±8V | HEXFET® |
| IRF2903ZSTRLP | MOSFET N-CH 30V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 290W (Tc) | 30V | 75A (Tc) | 2.4mOhm @ 75A, 10V | 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | ±20V | HEXFET® |
| IRF3610SPBF | MOSFET N-CH 100V 103A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 333W (Tc) | 100V | 103A (Tc) | 11.6mOhm @ 62A, 10V | 10V | 4V @ 250µA | 150nC @ 10V | 5380pF @ 25V | ±20V | HEXFET® |
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