-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Вид монтажа
|
Package / Case
|
Технология
|
Рабочая температура
|
Тип канала
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Непрерывный ток стока (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFZ34NSTRR | MOSFET N-CH 55V 29A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 68W (Tc) | 55V | 29A (Tc) | 40mOhm @ 16A, 10V | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | HEXFET® |
| IRL3803SPBF | MOSFET N-CH 30V 140A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 30V | 140A (Tc) | 6mOhm @ 71A, 10V | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | ±16V | HEXFET® |
| IRFS52N15DTRRP | MOSFET N-CH 150V 51A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 230W (Tc) | 150V | 51A (Tc) | 32mOhm @ 36A, 10V | 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | ±30V | HEXFET® |
| IRFS23N20D | MOSFET N-CH 200V 24A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 170W (Tc) | 200V | 24A (Tc) | 100mOhm @ 14A, 10V | 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | ±30V | HEXFET® |
| IRF1010ZS | MOSFET N-CH 55V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 55V | 75A (Tc) | 7.5mOhm @ 75A, 10V | 10V | 4V @ 250µA | 95nC @ 10V | 2840pF @ 25V | ±20V | HEXFET® |
| IRL520NS | MOSFET N-CH 100V 10A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 48W (Tc) | 100V | 10A (Tc) | 180mOhm @ 6A, 10V | 4V, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±16V | HEXFET® |
| IRF3711ZCSTRLP | MOSFET N-CH 20V 92A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 20V | 92A (Tc) | 6mOhm @ 15A, 10V | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | HEXFET® |
| IRL3402STRR | MOSFET N-CH 20V 85A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 110W (Tc) | 20V | 85A (Tc) | 8mOhm @ 51A, 7V | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | HEXFET® |
| IRFZ44ZSTRRPBF | MOSFET N-CH 55V 51A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 80W (Tc) | 55V | 51A (Tc) | 13.9mOhm @ 31A, 10V | 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | ±20V | HEXFET® |
| IRF630NSTRLPBF | MOSFET N-CH 200V 9.3A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 82W (Tc) | 200V | 9.3A (Tc) | 300mOhm @ 5.4A, 10V | 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | ±20V | HEXFET® |
| IRF9530NS | MOSFET P-CH 100V 14A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 79W (Tc) | 100V | 14A (Tc) | 200mOhm @ 8.4A, 10V | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | HEXFET® |
| IRFS4321TRLPBF | MOSFET N-CH 150V 83A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 350W (Tc) | 150V | 85A (Tc) | 15mOhm @ 33A, 10V | 10V | 5V @ 250µA | 110nC @ 10V | 4460pF @ 25V | ±30V | HEXFET® |
| IRF2807STRRPBF | MOSFET N-CH 75V 82A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 75V | 82A (Tc) | 13mOhm @ 43A, 10V | 10V | 4V @ 250µA | 160nC @ 10V | 3820pF @ 25V | ±20V | HEXFET® |
| IRL2505STRR | MOSFET N-CH 55V 104A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 55V | 104A (Tc) | 8mOhm @ 54A, 10V | 4V, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | ±16V | HEXFET® |
| IRFS17N20DTRR | MOSFET N-CH 200V 16A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 140W (Tc) | 200V | 16A (Tc) | 170mOhm @ 9.8A, 10V | 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | ±30V | HEXFET® |
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